NT5AD512M16C4-JRU vs MT40A512M8SA-062E Comparison
Detailed side-by-side comparison of NT5AD512M16C4-JRU by Nanya Technology and MT40A512M8SA-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ Active
Specification Comparison
| Parameter | NT5AD512M16C4-JRU | MT40A512M8SA-062E |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Category | DRAM | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $83.00 | $5.35 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Organization | 512M x 16 | 512M x 8 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.6 GHz |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Package | 96-ball FBGA (PBGA96) | 78-FBGA (7.5 x 11 mm), Z10B |
| Operating Temperature | -40 C to +95 C (industrial grade) | — |
| Interface | CMOS, DDR4 | Parallel, 1.2 V pseudo open-drain I/O |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Green Product (per Nanya product page) | — |
| Memory Size | — | 4 Gbit |
| Data Rate | — | 3200 MT/s (DDR4-3200 class) |
| Access Time | — | 13.75 ns |
| Write Cycle Time | — | 15 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP Supply | — | 2.5 V (-125 mV / +250 mV) |
| VREFDQ | — | On-die internal adjustable generation |
| Operating Temperature (TC max) | — | up to 95 degrees C |
| Package Flow | — | :F (lead-free / RoHS) |
| Mounting Style | — | SMD/SMT |