NT5CB256M16CP-DII vs NT5CC256M16CP-DIB1 对比
详细并排对比 NT5CB256M16CP-DII 出自 Nanya Technology 和 NT5CC256M16CP-DIB1 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CB256M16CP-DII | NT5CC256M16CP-DIB1 |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.57 | $6.00 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| I/O Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| 数据速率 | DDR3L-1600 (PC3L-12800) | 1600Mbps (DDR3L-1600) |
| CAS 延迟 | CL11 | — |
| tCK (min) | 1.25 ns | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8, 4 (with burst chop) | 8 (BL8) and 4 (BC4) |
| 接口 | SSTL-15 | — |
| 封装 | 96-ball FBGA (9mm x 13mm) | TFBGA-96, 9x13mm, 0.8mm pitch |
| 工作温度范围 | -40C to +95C (industrial) | — |
| Refresh Interval | 7.8us at 85C, 3.9us at 95C | — |
| RoHS | Compliant | Compliant |
| 电源电压 | — | 1.35V |
| CAS Latency (CL) | — | 11 |
| Write Latency (CWL) | — | 8 |
| tRCD/tRP | — | 11 |
| 工作温度 | — | 0C to +95C (Tcase) |
| 无卤 | — | Yes |
| Lead Free | — | Yes |