NT5CC256M16CN-FLNA vs MT41K256M16HA-125 对比

详细并排对比 NT5CC256M16CN-FLNA 出自 Nanya Technology 和 MT41K256M16HA-125 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Nanya Technology
NT5CC256M16CN-FLNA NT5CC256M16CN-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CN-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CN-FLNA ✓ 量产中
Micron Technology
MT41K256M16HA-125 MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 ✓ 量产中

规格对比

参数 NT5CC256M16CN-FLNA MT41K256M16HA-125
品牌 Nanya Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.00 $6.36
存储器类型 DDR3L SDRAM SDRAM - DDR3L
Density 4 Gb —
存储组织 256M x 16 —
Supply Voltage (VDD) 1.35 V (1.283 V to 1.45 V) —
Supply Voltage (VDDQ) 1.35 V (1.283 V to 1.45 V) —
数据速率 1866 Mbps (max) —
CAS 延迟 13 (at 1866 Mbps) 11
Burst Length 8, 4 —
Number of Banks 8 —
封装 96-ball FBGA 96-FBGA (9x14 mm)
工作温度范围 0C to +95C (TC) commercial, -40C to +95C industrial, -40C to +105C automotive —
Storage Temperature -55C to +100C —
Refresh Auto-refresh, self-refresh, TCSR —
RoHS Compliant —
Lead-Free Yes Yes
存储容量 — 4Gbit (256M x 16)
数据总线宽度 — 16 bit
Clock Frequency — 800 MHz
Access Time — 13.75 ns
电源电压 — 1.35 V
引脚数 — 96
安装类型 — Surface Mount
工作温度 — [DATA_NEEDED: operating temperature range]
RoHS 状态 — Compliant
Logic Family — CMOS
Refresh Interval — 7.8 us at 85C

数据手册与资源

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