NT6AN8T0SA vs H5AN8G6NDJR-XNC 对比
详细并排对比 NT6AN8T0SA 出自 Nanya Technology 和 H5AN8G6NDJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT6AN8T0SA | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.88 | $55.68 |
| 存储器类型 | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| 存储组织 | 64M x 32 | — |
| 电源电压 | 1.2V | — |
| I/O Voltage | 1.2V | — |
| 数据速率 | 1066 Mbps (533 MHz) | 3200 Mbps |
| 工作温度范围 | -30°C to +85°C | — |
| 封装 | FBGA | FBGA-96 (13x7.5 mm) |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| 无卤 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |