NT6AN8T0SA vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of NT6AN8T0SA by Nanya Technology and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT6AN8T0SA | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $55.68 |
| Memory Type | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| Organization | 64M x 32 | — |
| Supply Voltage | 1.2V | — |
| I/O Voltage | 1.2V | — |
| Data Rate | 1066 Mbps (533 MHz) | 3200 Mbps |
| Operating Temperature Range | -30°C to +85°C | — |
| Package | FBGA | FBGA-96 (13x7.5 mm) |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Halogen Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |