NT6AN8T0SA vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of NT6AN8T0SA by Nanya Technology and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT6AN8T0SA | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.88 | $55.68 |
| Memory Type | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | β |
| Organization | 64M x 32 | β |
| Supply Voltage | 1.2V | β |
| I/O Voltage | 1.2V | β |
| Data Rate | 1066 Mbps (533 MHz) | 3200 Mbps |
| Operating Temperature Range | -30Β°C to +85Β°C | β |
| Package | FBGA | FBGA-96 (13x7.5 mm) |
| Mounting Type | Surface Mount | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85Β°C | β |
| Burst Length | 4 or 8 | β |
| On-Die Termination | Yes | β |
| DLL | Yes | β |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 512M x16 |
| Supply Voltage (VDD) | β | 1.2 V (max 1.26 V) |
| Number of Terminals | β | 96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Input/Output Type | β | COMMON |
| RoHS | β | Compliant |
| Halogen-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |