TLP183GB(GB-TPL.E vs TLP183(GB-TPL 对比

详细并排对比 TLP183GB(GB-TPL.E 出自 Toshiba 和 TLP183(GB-TPL 出自 Toshiba。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Toshiba
TLP183GB(GB-TPL.E TLP183(GB-TPL,E - 3750Vrms Phototransistor Optocoupler SO6

TLP183(GB-TPL,E - 3750Vrms Phototransistor Optocoupler SO6

TLP183GB(GB-TPL.E ✓ 量产中

规格对比

参数 TLP183GB(GB-TPL.E TLP183(GB-TPL
品牌 Toshiba Toshiba
分类 Surge Protectors Optocouplers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.13 $0.12
Product Type Phototransistor Optocoupler (Optoisolator) Phototransistor Output Optocoupler
输出类型 DC, Phototransistor (single channel) Phototransistor (BJT)
Number of Channels 1 1
Input Type DC DC (InGaAs Infrared LED)
Maximum Forward Current (IF) 50 mA —
Maximum Forward Voltage (VF) 1.4 V —
集电极-发射极电压(Vceo) 80 V 80 V max
Maximum Collector Current 50 mA —
Isolation Voltage 3750 Vrms 3750 Vrms
CTR Rank GB (100% to 300% at IF=5 mA, VCE=5 V) GB (50-600% range)
工作温度范围 -55C to +110C —
封装 4-pin SO6 (6-SOP surface mount) 6-SO (SO6, 4-pin functional)
安装类型 Surface Mount Surface Mount
Safety Standards UL, cUL, VDE, CQC certified (per Toshiba datasheet) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Manufacturer — Toshiba Semiconductor and Storage
Forward Current (IF) — 50 mA max
Reverse Voltage (VR) — 6 V max
Forward Voltage (VF) — 1.25 V typ at IF=10 mA
Emitter-Collector Voltage (VECO) — 7 V max
集电极电流(Ic) — 50 mA max
CTR (Current Transfer Ratio) — 50% min (IF=5 mA, VCE=5 V) - GB rank
工作温度 — -55 C to +125 C
Storage Temperature — -55 C to +150 C
Rise Time (tr) — 5 us typ
Fall Time (tf) — 5 us typ
Tape and Reel Packaging — TPL (L direction, 3000 pcs/reel)
Packing Option Code — E (RoHS)

数据手册与资源

浏览全部产品 创建 BOM 获取报价