VNS3NV04DPTR-E vs VNI4140K-32 对比

详细并排对比 VNS3NV04DPTR-E 出自 STMicroelectronics 和 VNI4140K-32 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
VNS3NV04DPTR-E VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics

VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics

VNS3NV04DPTR-E ✓ 量产中

规格对比

参数 VNS3NV04DPTR-E VNI4140K-32
品牌 STMicroelectronics STMicroelectronics
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.96 $2.05
Manufacturer STMicroelectronics —
Product Family OMNIFET II —
Process Technology VIPower M0-3 —
Device Type Fully autoprotected low-side Power MOSFET switch Quad high-side smart power solid-state relay
Channel Configuration 2 x N-channel (dual independent or parallel) —
Drain-Source Clamp Voltage 40 V —
On-State Resistance (Rds(on)) 35 mOhm typical / 50 mOhm max —
Continuous Drain Current 3.5 A —
Peak Drain Current 12 A —
Current Limitation (typ) 3.5 A —
Maximum Switching Frequency 50 kHz (DC applications) —
工作温度范围 -40 C to +150 C (junction) —
封装 SO-8 (Tape & Reel) PowerSSO-24 (24-pin with exposed thermal pad)
安装类型 Surface Mount Surface Mount
Built-in Protections Avalanche clamp, current limit, thermal shutdown, ESD gate protection —
Automotive Qualified Yes (per datasheet title variant) —
RoHS 状态 Compliant —
Number of Channels — 4
拓扑 — High-side switch (N-channel MOSFET)
Load Current per Channel — 1.0 A (continuous)
On-State Resistance (RDS(on)) — 0.08 ohm per channel
Supply Voltage (VCC) Max — 41 V
输出配置 — 1:1 N-Channel
输出数量 — 4
Diagnostics — Per-channel open-load, short-to-ground, thermal fault
Inductive Load Handling — Fast demagnetization (integrated)
Logic Input Compatibility — CMOS/TTL compatible logic inputs
Package Width — 7.50 mm (approximately 0.295 inch)
Industrial Standard Compliance — IEC 61131-2
ESD Rating — 25 kV (per IEC standard, air discharge)
Technology — ST VIPower (vertical DMOS + CMOS/bipolar control)

数据手册与资源

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