W25H02JVTBIM vs MT25QL02GCBB8E12-0AUT 对比

详细并排对比 W25H02JVTBIM 出自 Winbond 和 MT25QL02GCBB8E12-0AUT 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Winbond
W25H02JVTBIM W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM ✓ 量产中
Micron Technology
MT25QL02GCBB8E12-0AUT MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT ✓ 量产中

规格对比

参数 W25H02JVTBIM MT25QL02GCBB8E12-0AUT
品牌 Winbond Micron Technology
分类 Memory ICs Flash
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.38 $7.65
Density 2 Gbit (256M x 8) —
存储器类型 Serial NOR Flash NOR Flash, Serial (SPI)
接口 SPI / Dual SPI / Quad SPI / QPI / DTR SPI, Dual SPI, Quad I/O
Maximum Clock Rate 133 MHz —
Equivalent Throughput (Quad DTR) 416 MHz (50 MB/s) —
Access Time 7.5 ns —
Supply Voltage (VCC) 2.7 V to 3.6 V —
Sector Size 4 KB uniform —
Block Size 32 KB and 64 KB —
Program/Erase Endurance 100,000 cycles per sector —
Data Retention 20 years —
封装 24-ball TFBGA (8x6 mm) 24-T-PBGA (6x8 mm)
工作温度 -40C to +85C -40C to +125C
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
无卤 Yes —
JEDEC Manufacturer ID 0xEF (Winbond) —
Memory Capacity — 2 Gbit (256 MB)
存储组织 — 256M x 8
最大时钟频率 — 133 MHz
电源电压 — 2.7 V to 3.6 V
Programming Voltage — 3 V
Endurance — 100000 write/erase cycles
Qualification — AEC-Q100 (automotive)
特性 — XIP, write enable latch, power-on reset, hardware/software write protection, absolute write protection, extended address access
Marking Code — RW340
Supply Voltage Class — 3 V (MT25QL series)
Access Protocol Support — Standard/Dual-Output/Dual-I/O/Quad-Output/Quad-I/O SPI

数据手册与资源

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