W9751G6KB-25 vs W9751G6KB-25-TR 对比
详细并排对比 W9751G6KB-25 出自 Winbond 和 W9751G6KB-25-TR 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | W9751G6KB-25 | W9751G6KB-25-TR |
|---|---|---|
| 品牌 | Winbond | Winbond |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $1.62 |
| 存储器类型 | Volatile DRAM (DDR2 SDRAM) | Volatile DRAM, DDR2 SDRAM |
| 存储容量 | 512 Mbit (32M x 16) | 512 Mbit (64 MB) |
| 存储组织 | 32M words x 16 bits | 32M x 16 (8M words x 4 banks x 16 bits) |
| Speed Grade | -25 (DDR2-800) | — |
| Clock Frequency | 400 MHz | 400 MHz (DDR2-800) |
| 数据速率 | 800 MT/s | 800 MT/s |
| Access Time | 57.5 ns (CAS latency timing window) | 57.5 ns (clock cycle) |
| 电源电压 | 1.8 V typical | — |
| 接口类型 | Parallel DDR2 (SSTL_18) | — |
| 封装 | 84-ball WBGA / TFBGA, 8 x 12.5 mm | 84-WBGA (8 x 12.5 mm) |
| Refresh Cycles | 8K (per JEDEC DDR2 standard) | — |
| Burst Length | 4 or 8 (programmable) | 4, 8 (with burst chop) |
| CAS 延迟 | Programmable (typically 3 to 6) | — |
| On-Die Termination | Yes (ODT) | — |
| Self Refresh | Yes | — |
| 工作温度 | [DATA_NEEDED: operating temperature grade] | 0 C to 85 C (commercial) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | RoHS Compliant |
| 接口 | — | Parallel, SSTL_18 |
| Supply Voltage (VDD/VDDQ) | — | 1.7 V to 1.9 V (1.8 V nominal) |
| Number of Banks | — | 4 |
| On-Die Termination (ODT) | — | Yes, programmable |
| Self-Refresh / Power-Down | — | Supported |
| Delivery Form | — | Tape and Reel (TR) |