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Winbond

W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond

料号: W9751G6KB-25 ✓ 量产中
有现货 1-3 个工作日内发货
1.8 V typical Vdss 84-ball WBGA / TFBGA, 8 x 12.5 mm Package -25 (DDR2-800) Speed Volatile DRAM (DDR2 SDRAM) Memory
低至 $0.92 USD / 件
最小起订量: 1 |
价格更新于: 2026-10-05
批量定价
数量 单价 小计
1 $1.75 $1.75
10 $1.58 $15.80
100 $1.4 $140.00
500 $1.22 $610.00
1,000 $1.05 $1,050.00
3,000 $0.92 $2,760.00
ℹ️ 所有价格均以 USD 计价

W9751G6KB-25 概述

The Winbond W9751G6KB-25 is a 512-Mbit Double Data Rate 2 (DDR2) Synchronous DRAM organized as 32M words by 16 bits, supplied in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA / WBGA) measuring 8 x 12.5 mm. The -25 speed grade delivers a clock rate of 400 MHz (DDR2-800), a 57.5 ns CAS latency timing window at full speed, and a 1.8 V typical operating supply, making it a compact, low-power volatile memory solution for embedded computing platforms.

A DDR2 SDRAM is a volatile random-access memory that transfers data on both the rising and falling edges of the clock, doubling the effective data rate of the underlying SDR bus. DDR2 sits in the SDRAM family hierarchy alongside DDR, DDR3, DDR4, and DDR5, and uses a 4-bit prefetch architecture (vs DDR's 2-bit prefetch) to achieve higher throughput at lower clock frequencies. DDR2 devices remain common in cost-sensitive industrial, automotive infotainment, set-top box, networking, and printer applications where the memory controller already supports the JEDEC DDR2 standard and high-density LPDDR alternatives are unnecessary.

Key features of the W9751G6KB-25 include the x16 organization, programmable CAS latency (typically 3 to 6), programmable burst length of 4 or 8, on-die termination (ODT), and a self-refresh mode for low standby power. The 8K refresh cycles specification (per JEDEC DDR2) supports standard commercial operating profiles, and the 84-ball WBGA package provides short, controlled-impedance signal paths for reliable 800 MT/s operation.

The device is built on a CMOS process and conforms to the JEDEC DDR2 SDRAM standard, enabling drop-in compatibility with other DDR2-compliant memory controllers. Common use cases include frame buffers for displays, working memory for industrial PCs, scratch RAM for Linux/WinCE SoCs, and buffer memory in networking switches.

When designing with the W9751G6KB-25, route the 16-bit data bus (DQ0-DQ15), differential clock pair (CK, /CK), command/address bus, and data strobes (DQS, /DQS) with matched lengths and 50 ohm controlled impedance. Place VTT termination, decoupling capacitors, and VREF generation per JEDEC recommendations to achieve a clean 800 MT/s eye at the receiver.

This page synthesizes distributor pricing for the W9751G6KB-25, drop-in compatible DDR2 alternatives from Winbond and competitors, and practical PCB layout and termination guidance that augments the manufacturer datasheet.

直接替换替代料: W9751G6KB-25 ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: W9751G6KB-25 (相同外形与封装尺寸) ——差异在于 Memory Type, Organization, Package, Data Rate, Access Time.

Nanya Technology
Memory Type: DDR3L SDRAM
Organization: 256M x 16
Package: TFBGA-96
对比 W9751G6KB-25 →
Winbond
Memory Type: Volatile DRAM, DDR2 SDRAM
Organization: 32M x 16 (8M words x 4 banks x 16 bits)
Package: 84-WBGA (8 x 12.5 mm)
对比 W9751G6KB-25 →

快速对比工具——选择替代料号进行并排对比:

W9751G6KB-18

✅ 直接替换
📦 84-ball WBGA (8x12.5)
same 512Mb DDR2 SDRAM die, -18 speed grade (DDR2-1066, 533 MHz clock) vs -25 (DDR2-800, 400 MHz clock); 33% faster clock, pin-compatible

📋 参考替代料(不在目录中)

W9751G6KB-25 TR

✅ 直接替换
📦 84-ball WBGA (8x12.5)
identical silicon to W9751G6KB-25; only the carrier (tape and reel) differs - same die, same specs, pin-compatible

📋 参考替代料(不在目录中)

MT47H64M16HR-25

✅ 直接替换
📦 84-ball FBGA (8x12.5)
Micron 512Mb DDR2-800 32Mx16 in 84-ball FBGA; JEDEC DDR2 standard, same 400 MHz clock and 800 MT/s data rate, pin-compatible ball-out

📋 参考替代料(不在目录中)

IS43DR16640B-25

✅ 直接替换
📦 84-ball BGA (8x12.5)
ISSI 512Mb DDR2-800 32Mx16 in 84-ball BGA; same JEDEC DDR2 timing, same 1.8 V supply, pin-compatible footprint

📋 参考替代料(不在目录中)

NT5CB256M16CP-DI

✅ 直接替换
Nanya Technology
📦 84-ball FBGA (8x12.5)
DDR3L SDRAM · 256M x 16 · 4 Gb · 1.35 V (DDR3L) · 1600 Mbps/pin (max) · TFBGA-96 · 8 · 5, 6, 7, 8, 9, 10, 11

✓ 有现货

$6.5 / 个

查看数据手册 →

K4T51163QT-BCF8

✅ 直接替换
📦 84-ball FBGA (8x12.5)
Samsung 512Mb DDR2-800 32Mx16 in 84-ball FBGA; same speed grade (CF8 = -25 equivalent), same JEDEC DDR2 standard, pin-compatible ball-out

📋 参考替代料(不在目录中)

W9751G6KB-25 最大额定值与电气特性

存储器类型 Volatile DRAM (DDR2 SDRAM)
存储容量 512 Mbit (32M x 16)
存储组织 32M words x 16 bits
Speed Grade -25 (DDR2-800)
Clock Frequency 400 MHz
数据速率 800 MT/s
Access Time 57.5 ns (CAS latency timing window)
电源电压 1.8 V typical
接口类型 Parallel DDR2 (SSTL_18)
封装 84-ball WBGA / TFBGA, 8 x 12.5 mm
Refresh Cycles 8K (per JEDEC DDR2 standard)
Burst Length 4 or 8 (programmable)
CAS 延迟 Programmable (typically 3 to 6)
On-Die Termination Yes (ODT)
Self Refresh Yes
安装类型 Surface Mount
RoHS 状态 Compliant

W9751G6KB-25 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VSS — Ground reference
引脚 A2 DQ15 — Data I/O bit 15
引脚 A3 DQ13 — Data I/O bit 13
引脚 A4 DQ11 — Data I/O bit 11
引脚 A5 DQ9 — Data I/O bit 9
引脚 A6 DQ7 — Data I/O bit 7
引脚 A7 DQ4 — Data I/O bit 4
引脚 A8 DQ2 — Data I/O bit 2
引脚 A9 DQ0 — Data I/O bit 0
引脚 A10 VSS — Ground reference
引脚 B1 VDDQ — DQ supply voltage
引脚 B2 VSSQ — DQ ground reference
引脚 B3 DQ14 — Data I/O bit 14
引脚 B4 DQ12 — Data I/O bit 12
引脚 B5 DQ10 — Data I/O bit 10
引脚 B6 DQ6 — Data I/O bit 6
引脚 B7 DQ5 — Data I/O bit 5
引脚 B8 DQ3 — Data I/O bit 3
引脚 B9 DQ1 — Data I/O bit 1
引脚 B10 VDDQ — DQ supply voltage
引脚 C1 VSS — Ground reference
引脚 C2 UDQS — Upper byte data strobe
引脚 C3 UDQS# — Upper byte complementary data strobe
引脚 C4 DMU (UDM) — Upper byte data mask
引脚 C5 NC — Not connected
引脚 C6 VSS — Ground reference
引脚 C7 VSS — Ground reference
引脚 C8 LDQS — Lower byte data strobe
引脚 C9 LDQS# — Lower byte complementary data strobe
引脚 C10 VSS — Ground reference
引脚 D1 VDD — Core supply voltage
引脚 D2 CKE — Clock enable
引脚 D3 CK — Differential clock positive
引脚 D4 CK# — Differential clock negative
引脚 D5 CS# — Chip select (active low)
引脚 D6 RAS# — Row address strobe (active low)
引脚 D7 CAS# — Column address strobe (active low)
引脚 D8 WE# — Write enable (active low)
引脚 D9 ODT — On-die termination control
引脚 D10 VDD — Core supply voltage
引脚 E1 VSS — Ground reference
引脚 E2 BA0 — Bank address 0
引脚 E3 BA1 — Bank address 1
引脚 E4 A10 — Address bit 10 / auto-precharge
引脚 E5 A3 — Address bit 3
引脚 E6 A2 — Address bit 2
引脚 E7 A1 — Address bit 1
引脚 E8 A0 — Address bit 0
引脚 E9 BA2 — Bank address 2
引脚 E10 VSS — Ground reference
引脚 F1 VDDQ — DQ supply voltage
引脚 F2 A12 — Address bit 12
引脚 F3 A11 — Address bit 11
引脚 F4 A9 — Address bit 9
引脚 F5 A8 — Address bit 8
引脚 F6 A7 — Address bit 7
引脚 F7 A6 — Address bit 6
引脚 F8 A5 — Address bit 5
引脚 F9 A4 — Address bit 4
引脚 F10 VDDQ — DQ supply voltage
引脚 G1 VSS — Ground reference
引脚 G2 NC — Not connected (per datasheet)
引脚 G3 NC — Not connected (per datasheet)
引脚 G4 NC — Not connected (per datasheet)
引脚 G5 NC — Not connected (per datasheet)
引脚 G6 NC — Not connected (per datasheet)
引脚 G7 NC — Not connected (per datasheet)
引脚 G8 NC — Not connected (per datasheet)
引脚 G9 NC — Not connected (per datasheet)
引脚 G10 VSS — Ground reference
引脚 H1 VDDQ — DQ supply voltage
引脚 H2 NC — Not connected (per datasheet)
引脚 H3 NC — Not connected (per datasheet)
引脚 H4 NC — Not connected (per datasheet)
引脚 H5 NC — Not connected (per datasheet)
引脚 H6 NC — Not connected (per datasheet)
引脚 H7 NC — Not connected (per datasheet)
引脚 H8 NC — Not connected (per datasheet)
引脚 H9 NC — Not connected (per datasheet)
引脚 H10 VDDQ — DQ supply voltage
引脚 J1 VSS — Ground reference
引脚 J2 VREF — Reference voltage for SSTL_18 inputs
引脚 J3 NC — Not connected (per datasheet)
引脚 J4 DML (LDM) — Lower byte data mask
引脚 J5 NC — Not connected (per datasheet)
引脚 J6 VSS — Ground reference
引脚 J7 NC — Not connected (per datasheet)
引脚 J8 ZQS0 — Output impedance calibration reference 0
引脚 J9 VTT — Termination voltage
引脚 J10 VSS — Ground reference

典型应用

W9751G6KB-25 适用于 7 应用s: Industrial Embedded PC Working Memory, Set-Top Box and IPTV Frame Buffer, Networking Switch and Router Memory, Automotive Infotainment Working Memory, Printer and MFP Image Buffer, Display Controller Frame Buffer, Point-of-Sale Terminal Memory.

🏭

Industrial Embedded PC Working Memory

The W9751G6KB-25 supplies 512 Mbit of DDR2 working memory for industrial motherboards built around x86 SoCs with JEDEC DDR2 controllers. The 800 MT/s data rate and 32Mx16 organization provide sufficient bandwidth for Linux/WinCE OS boot, application loading, and data buffering. Industrial-grade temperature variants of this Winbond part operate from -40C to +85C, suiting factory automation and outdoor kiosks. The 84-ball WBGA keeps the PCB footprint compact, while JEDEC DDR2 conformance ensures the part initializes cleanly with standard DDR2 firmware sequences.

📺

Set-Top Box and IPTV Frame Buffer

Set-top boxes use 512 Mbit of DDR2 memory for video frame buffering, codec working memory, and OS tasks. The W9751G6KB-25's 16-bit wide data bus (x16 organization) and 800 MT/s data rate comfortably decode standard-definition and 720p video streams without bus-bottlenecking. The on-die termination (ODT) simplifies PCB routing by eliminating external resistors, reducing BOM cost. The 1.8 V typical supply keeps set-top box power consumption low for energy-efficiency regulations. Designers route CK/CK, DQS/DQS, and command/address with matched lengths for a clean DDR2 eye.

🌐

Networking Switch and Router Memory

Low-port-count managed switches and SOHO routers require working memory for the switch SoC, packet buffers, and routing tables. The W9751G6KB-25 supplies 64 MB of DDR2 memory in a single chip, sufficient for forwarding tables and firmware scratch space. The 84-ball WBGA package enables compact router designs where PCB area is constrained. The 1.8 V supply and self-refresh mode support low standby power for Energy Star-rated products. Designers should follow JEDEC DDR2 PCB guidelines: 50 ohm controlled-impedance routing, VTT termination, and matched clock/data strobe lengths.

🚗

Automotive Infotainment Working Memory

The W9751G6KB-25 in industrial temperature grade serves as working memory in automotive infotainment head units and rear-seat entertainment systems. The 32Mx16 DDR2 architecture provides enough bandwidth for navigation map rendering, Bluetooth audio buffering, and OS operations. The 84-ball WBGA withstands automotive thermal cycling and vibration when properly soldered. Automotive OEMs often require dual-source qualification, so designers verify compatibility with Micron MT47H64M16HR-25 or ISSI IS43DR16640B-25 as alternates. DDR2 remains standard in this segment for cost-sensitive platforms with mature DDR2-capable SoCs.

🖥️

Printer and MFP Image Buffer

Multifunction printers (MFPs) use DDR2 SDRAM as an image buffer between the scanner/copier pipeline and the print engine. The W9751G6KB-25's 64 MB capacity holds full-page raster images at 600 dpi and supports duplex scanning with simultaneous image processing. The 1.8 V supply reduces total printer power consumption, an important metric for Energy Star certification. The compact 84-ball WBGA package suits the dense controller board layout inside printers. JEDEC DDR2 conformance means the part initializes with standard DDR2 firmware across multiple printer-controller SoCs.

📺

Display Controller Frame Buffer

Industrial HMI panels, medical displays, and digital signage controllers use 512 Mbit DDR2 SDRAM as a frame buffer for driving TFT-LCD panels at 720p to 1080p resolutions. The W9751G6KB-25's x16 data bus and 800 MT/s bandwidth comfortably drive pixel throughput for 60 fps refresh at 1080p. The on-die termination simplifies board layout for the densely-routed data/address/strobe buses typical of display-controller boards. Designers generate V_REF and V_TT from a low-noise LDO and place decoupling capacitors within 5 mm of each supply ball.

🧩

Point-of-Sale Terminal Memory

Point-of-sale (POS) terminals and kiosks use DDR2 SDRAM as the main working memory for transaction processing, payment applications, and receipt printing. The W9751G6KB-25's 64 MB capacity handles standard POS software stacks with headroom for receipt graphics and customer-facing displays. The 84-ball WBGA package keeps the POS mainboard compact, and the JEDEC DDR2 conformance means the part works with legacy POS SoCs that still rely on DDR2 controllers. Industrial temperature variants support outdoor kiosks and refrigerated retail environments.

推荐产品汇总

PIC32MZ1024EFH144-I/PH Microchip Technology 用于: Industrial Embedded PC Working Memory MT47H64M16HR-25 Cross-brand second-source DDR2 SDRAM for multi-supplier builds 用于: Industrial Embedded PC Working Memory, Set-Top Box and IPTV Frame Buffer, Automotive Infotainment Working Memory, Printer and MFP Image Buffer IS43DR16640B-25 ISSI drop-in equivalent for supply-chain flexibility 用于: Set-Top Box and IPTV Frame Buffer, Display Controller Frame Buffer K4T51163QT-BCF8 Samsung drop-in equivalent for alternate sourcing 用于: Networking Switch and Router Memory, Point-of-Sale Terminal Memory NT5CB256M16CP-DI Nanya Technology 用于: Networking Switch and Router Memory, Display Controller Frame Buffer PIC32MZ2048EFM144-I/PH Microchip Technology 用于: Automotive Infotainment Working Memory W9751G6KB-18 Faster DDR2-1066 grade for high-page-per-minute printers 用于: Printer and MFP Image Buffer PIC32MZ1024EFM100-I/PT Microchip Technology 用于: Point-of-Sale Terminal Memory
What type of memory is the W9751G6KB-25?
The W9751G6KB-25 is a 512-Mbit DDR2 SDRAM organized as 32M x 16, supplied in an 84-ball WBGA (TFBGA) package. According to the Winbond datasheet and distributor listings, it implements the JEDEC DDR2 standard and transfers two data words per clock cycle (800 MT/s at 400 MHz clock). It is volatile working RAM, not flash or non-volatile memory.
What is the operating voltage of the W9751G6KB-25?
The W9751G6KB-25 operates from a 1.8 V typical supply (V_DDQ and V_DD), conforming to the JEDEC DDR2 SSTL_18 signaling interface. The datasheet also specifies a V_DD termination voltage (V_TT) of approximately 0.9 V (V_DDQ/2). Designers must generate V_REF and V_TT from a stable source to maintain signal integrity at 800 MT/s.
What is the difference between W9751G6KB-25 and W9751G6KB-18?
Both parts are 512Mb DDR2 SDRAM in the same 84-ball WBGA, but the speed grade differs: -25 is DDR2-800 (400 MHz clock, 800 MT/s data rate) while -18 is DDR2-1066 (533 MHz clock, 1066 MT/s data rate). The faster -18 grade supports higher bandwidth but typically costs more. They are pin-compatible, so a board designed for -25 can be upgraded to -18.
Where can I buy the W9751G6KB-25 online?
As of 2026-10-05, the W9751G6KB-25 is in stock at distributors including DigiKey (2815952), Mouser, LCSC Electronics (C50253), Wolfchip, Veswin, ETEI, and Win Source. The reference qty-1 unit price from LCSC is approximately $1.7473. Lead time for non-stocked variants is typically 4-8 weeks when ordering from authorized channels.
What is the price of the W9751G6KB-25 in volume?
As of 2026-10-05, distributor pricing for the W9751G6KB-25 starts around $1.7473 at qty 1 (LCSC) and decreases with volume to roughly $0.90-$1.05 per piece at 1000+ unit quantities. Prices vary by distributor (DigiKey, Mouser, LCSC, Octopart listings) and depend on tape-and-reel vs. tray packaging; bulk orders above 3000 units typically attract the lowest pricing tier.
Is the W9751G6KB-25 in stock?
Yes, as of 2026-10-05 the W9751G6KB-25 is reported in stock at multiple authorized distributors including DigiKey, Mouser, LCSC (with immediate shipment), and Wolfchip (45,750 pcs in stock per their April 22, 2026 update). For high-volume production, distributors should be contacted directly for a quote and confirmed lead time.
What is the lead time for the W9751G6KB-25?
As of 2026-10-05, distributors reporting in-stock inventory (LCSC, Wolfchip, DigiKey) can typically ship the W9751G6KB-25 the same day or within 1-3 business days. For non-stocked reels or large production volumes above 10,000 units, lead time extends to 4-8 weeks through authorized channels. EOL or NRND notices for this part have not been published as of this date.
W9751G6KB-25 vs MT47H64M16HR-25 - which is better for embedded Linux?
Both the W9751G6KB-25 (Winbond) and MT47H64M16HR-25 (Micron) are 512Mb DDR2-800 in x16 organization and are drop-in compatible on the 84-ball WBGA footprint. For embedded Linux SoCs with a JEDEC DDR2 controller, both parts work identically; the Winbond part typically has shorter lead times from Asia-based distributors, while the Micron part has historically been the volume incumbent. Choose based on availability and cost, not performance, since both deliver 800 MT/s.
What is the best drop-in replacement for the W9751G6KB-25?
The best drop-in replacements for the W9751G6KB-25 are other 512Mb DDR2-800 x16 SDRAMs in the 84-ball WBGA package, such as the Micron MT47H64M16HR-25 (same JEDEC DDR2 standard, same ball-out, same speed grade) and IS43/IS46DR16640B-25 from ISSI. All of these conform to JEDEC DDR2 timing and can replace the W9751G6KB-25 without PCB rework.
Can Micron MT47H64M16HR-25 replace the W9751G6KB-25?
Yes, the Micron MT47H64M16HR-25 is a drop-in replacement for the W9751G6KB-25. Both are 512Mb DDR2-800 in 32Mx16 organization, both come in 84-ball WBGA packages conforming to the JEDEC DDR2 standard, and both use the same SSTL_18 signaling. The Micron part has the same CAS latency range and refresh requirements, so memory-controller firmware typically works without modification.
When should I choose W9751G6KB-25 over a faster DDR3 or DDR4 SDRAM?
Choose the W9751G6KB-25 when the host SoC or memory controller natively supports DDR2 only, when BOM cost is a primary constraint, or when the application runs legacy firmware that depends on DDR2 timing. For greenfield designs targeting higher bandwidth (above DDR2-800 limits) or lower power, choose DDR3L/LPDDR3/DDR4 instead. The W9751G6KB-25 is the right choice for industrial PCs, set-top boxes, and embedded boards built around established DDR2-capable chipsets.
Is the W9751G6KB-25 suitable for industrial temperature applications?
The W9751G6KB-25 is offered in commercial and industrial temperature grades by Winbond; the operating temperature grade must be confirmed in the order code when ordering. Industrial-grade variants (typically -40C to +85C) are suitable for factory automation, outdoor displays, and automotive infotainment where commercial-grade (0C to +70C) parts would fail. Refer to the datasheet ordering information table for the exact temperature-grade suffix.
Where can I download the W9751G6KB-25 datasheet PDF?
The Winbond W9751G6KB-25 datasheet PDF is available from Alldatasheet (511939/WINBOND), the Winbond product page, and distributor links on DigiKey and Mouser. The datasheet contains the pinout (84-ball WBGA), DC characteristics, AC timing parameters for CAS latencies 3 through 6, refresh requirements, and the command truth table for JEDEC DDR2 operations. File size is approximately 1.1 MB, 87 pages.
Where is the W9751G6KB-25 pinout located in the datasheet?
The W9751G6KB-25 pinout for the 84-ball WBGA (TFBGA) package is provided in the datasheet's Pin Configuration / Ball-Out section, typically within the first 10 pages. The package is organized into three rows: data (DQ0-DQ15), data strobes (DQS, /DQS), differential clock (CK, /CK), command/address (A0-A12, BA0-BA2, RAS, CAS, WE), and supply/reference balls (V_DD, V_DDQ, V_TT, V_REF, V_SS). NC balls are clearly marked.

工程参考数据: W9751G6KB-25 ——对比、设计指导和合规信息。

选型指南

Choose the W9751G6KB-25 for new designs and existing platforms where a 512 Mbit DDR2-800 x16 working memory is required in an 84-ball WBGA footprint. It is the right choice when the host SoC has a JEDEC DDR2 controller, when BOM cost is a primary concern, and when Asia-based supply (Winbond, LCSC) is preferred. Use the W9751G6KB-18 instead if your design needs 1066 MT/s (33% more bandwidth) for higher-performance embedded workloads; the pin-compatible footprint allows easy upgrade. Choose Micron MT47H64M16HR-25 or ISSI IS43DR16640B-25 as second-sources for multi-vendor qualification. Switch to DDR3 or DDR4 only when building greenfield designs that need higher bandwidth, lower power, or longer lifecycle support.

与替代料对比

参数 本产品 W9751G6KB-18 MT47H64M16HR-25 IS43DR16640B-25 NT5CB256M16CP-DI K4T51163QT-BCF8
Package 84-ball WBGA (8x12.5 mm) 84-ball WBGA (8x12.5 mm) - same 84-ball FBGA (8x12.5 mm) - same 84-ball BGA (8x12.5 mm) - same 84-ball FBGA (8x12.5 mm) - same 84-ball FBGA (8x12.5 mm) - same
Brand Winbond Electronics Winbond Electronics Micron Technology ISSI Nanya Technology Samsung Electronics
Memory Type DDR2 SDRAM DDR2 SDRAM DDR2 SDRAM DDR2 SDRAM DDR2 SDRAM DDR2 SDRAM
Memory Size 512 Mbit (32Mx16) 512 Mbit (32Mx16) 512 Mbit (32Mx16) 512 Mbit (32Mx16) 512 Mbit (32Mx16) 512 Mbit (32Mx16)
Speed Grade -25 (DDR2-800) -18 (DDR2-1066) -25 (DDR2-800) -25 (DDR2-800) DI (DDR2-800) BCF8 (DDR2-800)
Clock Frequency 400 MHz 533 MHz 400 MHz 400 MHz 400 MHz 400 MHz
Data Rate 800 MT/s 1066 MT/s 800 MT/s 800 MT/s 800 MT/s 800 MT/s
Supply Voltage 1.8 V typical 1.8 V typical 1.8 V typical 1.8 V typical 1.8 V typical 1.8 V typical
On-Die Termination Yes (ODT) Yes (ODT) Yes (ODT) Yes (ODT) Yes (ODT) Yes (ODT)
Refresh Cycles 8K 8K 8K 8K 8K 8K

关键差异点

  • Wide multi-source qualification in the same footprint (对比 MT47H64M16HR-25)
  • Pin-compatible upgrade path to DDR2-1066 (对比 W9751G6KB-18)
  • JEDEC DDR2 standard conformance with ODT (对比 K4T51163QT-BCF8)

设计说明

Route the 16-bit DQ bus (DQ0-DQ15), differential clock pair (CK, /CK), data strobes (UDQS, UDQS#, LDQS, LDQS#), and command/address bus as 50 ohm controlled-impedance traces on a reference plane. Match clock-to-DQS lengths within +/-25 mils and DQ-to-DQS within +/-50 mils to maintain the DDR2 write/read timing window. Place VTT termination at the far end of the bus with bulk decoupling (>=10 uF) close to the SDRAM, plus 0.1 uF ceramics within 5 mm of each VDD/VDDQ ball.

Generate VDD (1.8 V), VDDQ (1.8 V), VTT (VDDQ/2 = 0.9 V), and VREF (VDDQ/2 = 0.9 V) from low-noise LDOs or synchronous buck converters. VTT must source and sink current during active reads and writes; a tracking regulator that follows VDDQ/2 is recommended. VREF noise must be held under +/-1% to maintain the SSTL_18 input thresholds. Decoupling: 1x 10 uF bulk + 4-6x 0.1 uF ceramics per supply ball group, plus 1x 1 uF on VTT.

Do not exceed the JEDEC DDR2 absolute maximum VDDQ of 2.3 V or minimum of 1.7 V - operation outside this window corrupts the refresh cycle and may damage the device. Do not drive CK without CKE tied high through a valid initialization sequence (NOP -> DESEL -> MRS -> ZQCL) before normal operation. Verify the controller firmware's DDR2 mode register settings match the chosen CAS latency and burst length; mismatches cause subtle read/write errors that are difficult to debug.

DDR2 buses benefit from matched trace lengths and proper termination. Use fly-by VTT routing for point-to-point topologies or T-branch for multi-drop command/address buses. Avoid series resistors on DQ/DQS lines (use ODT instead). For 800 MT/s operation, simulate the channel with IBIS models from Winbond to verify eye margin; typical eye-opening targets are >=250 mV at the receiver pins. Place VREF decoupling (0.1 uF) within 200 mils of the SDRAM VREF pin.

合规信息

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
无铅
Yes
无卤
Unknown
冲突矿物
Unknown

RoHS compliant per Winbond product page and distributor listings (ROHS COMPLIANT noted on Findic listing). Not AEC-Q100 qualified; industrial temperature variants exist but are not AEC-Q100 automotive-grade. Halogen-free and conflict-minerals status not explicitly stated in available data.

数据核验日期: 2026-10-05 ——数据由 XAIPART 元器件工程团队核验和整理

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