IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon
MPN: IR2104STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.22 | $12.20 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.59 | $590.00 |
Drop-in alternatives for IR2104STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2104SPBF
β Drop-Inβ In Stock
$0.41 / Unit
View Datasheet βIR2101STRPBF
β Drop-Inβ In Stock
$0.22 / Unit
View Datasheet βIRS2104STRPBF
β Drop-Inβ In Stock
$0.45 / Unit
View Datasheet βIR2102STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2004STRPBF
β Drop-Inβ In Stock
$0.66 / Unit
View Datasheet βFAN7392MX
β Drop-Inπ Reference alternative (not in catalog)
IR2104STRPBF Maximum Ratings & Electrical Characteristics
| Product Type | Half-Bridge Gate Driver IC |
| Configuration | High-side and low-side referenced output channels |
| Number of Outputs | 2 (high-side + low-side) |
| Offset Voltage (High-Side, Max) | 600 V |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Output Source Current (typ) | 0.21 A |
| Output Sink Current (typ) | 0.36 A |
| Rise Time (typ) | 100 ns |
| Fall Time (typ) | 50 ns |
| Propagation Delay (typ) | 680 ns |
| Turn-On Propagation Delay (typ) | 150 ns |
| Turn-Off Propagation Delay (typ) | 130 ns |
| Quiescent Current (VCC/VBS, typ) | 150 uA |
| Input Logic Compatibility | 3.3 V, 5 V, 15 V logic |
| Shutdown Pin | Yes (active-low shutdown input) |
| Undervoltage Lockout | Yes (VCC and VBS) |
| Cross-Conduction Prevention | Yes (matched propagation delay) |
| dV/dt Immunity | Yes |
| Negative VS Transient Tolerance | Yes |
| Operating Temperature Range | -40 C to +150 C |
| Package | 8-SOIC (SOIC-8) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IR2104STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate-drive supply (10 V to 20 V) |
| Pin 2 | IN β Logic input for high-side and low-side outputs (3.3 V / 5 V / 15 V compatible) |
| Pin 3 | SD β Shutdown input (active low; disables HO and LO outputs) |
| Pin 4 | COM β Low-side return / ground reference |
| Pin 5 | LO β Low-side gate-drive output (source/sink current) |
| Pin 6 | VS β High-side floating supply return (connected to switching node) |
| Pin 7 | HO β High-side gate-drive output (source/sink current) |
| Pin 8 | VB β High-side floating supply (bootstrap rail referenced to VS) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IR2104STRPBF is suitable for 6 applications: BLDC Motor Drive for Industrial Fans and Pumps, Solar Micro-Inverter (Single-Phase Grid-Tie), Class D Audio Amplifier Output Stage, Uninterruptible Power Supply (UPS) Inverter Stage, Induction-Heating Cooktop Resonant Inverter, High-Voltage DC-DC Converter (H-Bridge).
BLDC Motor Drive for Industrial Fans and Pumps
The IR2104STRPBF drives the high-side and low-side N-channel MOSFETs or 600 V IGBTs in a three-phase bridge (three IR2104s needed per inverter) used in BLDC and PMSM motor drives for industrial fans, pumps, and conveyors. Its 600 V offset rating covers 230 VAC and 380 VAC bus rails, the 0.36 A sink current handles IGBT modules up to ~15 A continuous, and the 100 ns/50 ns rise/fall times keep switching losses low at 10-20 kHz PWM. The shutdown (SD) pin wires directly to the controller's fault output, instantly disabling both gate outputs on overcurrent. Pair with Infineon IKB06N60T IGBTs or IPA60R190C6 MOSFETs for a proven industrial drive front end.
Recommended
Solar Micro-Inverter (Single-Phase Grid-Tie)
In a 200-400 V DC solar micro-inverter stage the IR2104STRPBF drives the push-pull primary switches of a high-frequency transformer-isolated DC-DC converter that feeds a grid-tie inverter. Its 600 V offset rating handles 400 V DC bus with comfortable margin, and the HVIC level-shift supports bootstrap operation up to several hundred kHz with low-Qg MOSFETs. The shutdown pin allows the MPPT controller to gate the driver during grid-loss anti-islanding events. The 8-SOIC footprint enables a compact inverter PCB measuring under 60x60 mm, suitable for integrated AC module designs.
Recommended
Class D Audio Amplifier Output Stage
The IR2104STRPBF is a classic choice for subwoofer and full-range Class D amplifiers where each half-bridge channel drives a complementary pair of 200-400 V MOSFETs at 250-500 kHz switching frequency. Its 100 ns rise and 50 ns fall times preserve audio-edge fidelity and minimize dead-time distortion, while the 600 V rating covers Β±100 V rail Class D designs used in line-array PA amplifiers. The matched propagation delay between high-side and low-side outputs tightens dead-time accuracy to under 50 ns, reducing crossover distortion. Use a low-impedance ground plane and Kelvin-source return to keep the COM pin quiet.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
Online UPS systems use the IR2104STRPBF to drive the IGBT half-bridge legs of the 230 VAC output inverter fed from a 400 V DC bus. The 600 V rating gives ample margin above the 400 V DC link, and the shutdown (SD) pin accepts a hardware fault from the inverter's overcurrent or over-temperature comparators to disable both channels within microseconds. Three IR2104STRPBF devices are typically used in a full three-phase UPS or two for single-phase 230 V output. The SOIC-8 footprint simplifies layout and keeps the inverter stage PCB area compact for 1-3 kVA rack-mount designs.
Recommended
Induction-Heating Cooktop Resonant Inverter
Resonant half-bridge and full-bridge inverters in 1100-2200 W induction cooktops use the IR2104STRPBF to drive the high-frequency (20-50 kHz) IGBT or MOSFET tank that excites the L-C heating coil. The 600 V offset rating handles 320 V DC link from the rectified mains PFC output, and the level-shift supports the high-side switch on the floating half-bridge. The shutdown pin interfaces directly with the cooktop MCU's pan-detect and over-temperature safety chain. The IR2104's 100 ns rise / 50 ns fall times limit switching losses in the resonant tank where continuous hard-switching occurs on every AC cycle.
Recommended
High-Voltage DC-DC Converter (H-Bridge)
Isolated and non-isolated high-voltage DC-DC converters use the IR2104STRPBF to drive the H-bridge primary switches in telecom 48 V to 380 V bus converters, battery management for 400 V EV traction packs, and auxiliary HV supplies in industrial equipment. The 0.36 A sink current drives MOSFETs with gate charge up to about 30 nC comfortably, and the bootstrap operation keeps the high-side channel powered over the full duty-cycle range without an isolated supply. The matched propagation delay between HO and LO simplifies dead-time generation in the DSP or MCU firmware, critical to prevent shoot-through at high switching frequencies.
Recommended
Recommended Products Summary
Engineering reference data for IR2104STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2104SPBF | IR2101STRPBF | IRS2104STRPBF | IR2102STRPBF | FAN7392MX |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Offset Voltage (Max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Source / Sink Current | 0.21 A / 0.36 A | 0.21 A / 0.36 A | 0.29 A / 0.6 A | 0.21 A / 0.36 A | 0.21 A / 0.36 A | 3.0 A / 3.0 A |
| Rise / Fall Time | 100 ns / 50 ns | 100 ns / 50 ns | 100 ns / 50 ns | 100 ns / 50 ns | 100 ns / 50 ns | 50 ns / 30 ns |
| Shutdown Pin | Yes (SD) | Yes (SD) | No (LIN/HIN only) | Yes (SD) | No (LIN/HIN only) | No |
| UVLO | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V |
| Approx. Unit Price (1k qty) | $0.59 | $0.62 | $0.55 | $0.65 | $0.48 | $0.85 |
Key Differentiators
- Integrated shutdown pin with matched propagation delay (vs IR2101STRPBF)
- Higher source/sink drive current for large Qg MOSFETs (vs IR2104SPBF (tube variant))
- Tighter production specifications versus IRS2104 (vs IRS2104STRPBF)
Design Notes
Estimated: The IR2104STRPBF switching performance is highly sensitive to PCB layout. Place the bootstrap capacitor (CBS) and VCC bypass capacitor as close as possible to pins VB-VS and VCC-COM respectively, using short, wide traces to minimize parasitic inductance. The COM pin (pin 4) is the ground reference for both the low-side driver and the input logic - route it directly to the power ground of the low-side source/emitter with a Kelvin connection. A noisy COM can corrupt the UVLO and input comparators, causing spurious shutdown events at high dV/dt.
Estimated: Bootstrap capacitor sizing follows the rule CBS >= 10 * Qg / (dVBS_max / VBS), where Qg is the total gate charge of the high-side MOSFET and dVBS_max is the allowed ripple on VBS (typically 100-200 mV before triggering UVLO). For a typical 10 nC Qg MOSFET at 20 kHz with 50% duty, a 100 nF X7R ceramic capacitor rated 25 V or higher is sufficient. Use a fast-recovery bootstrap diode (trr < 100 ns) or a low-cost UF4007 to prevent VBS from discharging back into VCC during the low-side on-time.
Do not operate the IR2104STRPBF without a bootstrap capacitor and diode - the high-side channel will not turn on because VBS will collapse to VS within nanoseconds of HO going high. Also avoid leaving the SD pin floating; tie it to VCC through a 10 kohm pull-up to keep the part enabled. The shutdown pin has no internal pull-up. Finally, ensure VS does not go more negative than the absolute maximum negative transient rating (typically -5 V for IGBTs, -2 V for MOSFETs) or the level-shift latch-up protection will trigger.
At 20 kHz switching frequency with a 10 nC Qg MOSFET, the IR2104STRPBF gate-drive losses are approximately 4 mW per channel (P = VCC * Qg * fsw = 15 V * 10 nC * 20 kHz), which is well within the 8-SOIC thermal limit. Thermal concerns only arise at very high switching frequencies (>500 kHz) or with very large gate-charge loads; in those cases, use the IR2110STRPBF or IRS2184STRPBF with higher source/sink current capability and a 14-SOIC package for better thermal dissipation.
The high-side gate-drive loop (HO-VS-VB-CBS) is the largest source of EMI in IR2104STRPBF designs. Keep this loop area minimal by placing CBS directly between VB (pin 8) and VS (pin 6), and routing the HO trace above the VS trace in a tightly-coupled pattern. A gate-drive series resistor of 10-33 ohm dampens ringing from the gate-source capacitance and the parasitic trace inductance, reducing both EMI and overshoot on the MOSFET gate that could exceed the VGS maximum of +/-20 V.
Compliance Information
RoHS compliant per Infineon product page; lead-free (Pb-free) finish confirmed by the PBF suffix in the part number. AEC-Q100 not applicable - this is an industrial/consumer driver, not automotive-qualified.
