CY14V104LA-BA25XIT vs CY14V104LA-BA25XI 对比
详细并排对比 CY14V104LA-BA25XIT 出自 Infineon 和 CY14V104LA-BA25XI 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | CY14V104LA-BA25XIT | CY14V104LA-BA25XI |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.36 | $0.72 |
| 存储器类型 | nvSRAM (non-volatile SRAM) | nvSRAM (Non-Volatile SRAM) |
| 存储容量 | 4 Mbit | 4 Mbit |
| 存储组织 | 512K x 8 | 512K x 8 / 256K x 16 |
| Access Time | 25 ns | 25 ns |
| 接口 | Parallel | Parallel |
| Core Supply Voltage (VCC) | 3.0 V to 3.6 V | — |
| I/O Supply Voltage (VCCQ) | 1.65 V to 1.95 V | — |
| STORE Cycles | 1 million | — |
| Data Retention | 20 years | 20 years |
| Read/Write/RECALL Cycles | Infinite | — |
| AutoStore | Yes (external VCAP 61 uF to 180 uF) | — |
| Non-volatile Technology | QuantumTrap | — |
| 封装 | 48-FBGA (6x10 mm), TFBGA | 48-FBGA (6 x 10 mm, 1.20 mm height) |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | Industrial | — |
| RoHS 状态 | Compliant | Compliant |
| 电源电压 | — | 3 V (typical 3.3 V) |
| 工作温度 | — | -40C to +85C |
| STORE Cycle Endurance | — | 1,000,000 cycles minimum |
| SRAM Read/Write Endurance | — | Unlimited (infinite SRAM cycles) |
| Address Bus (x8 mode) | — | A0 to A18 |
| Address Bus (x16 mode) | — | A0 to A17 with BHE/BLE byte enables |
| Non-Volatile Functions | — | Automatic STORE on power-down, RECALL on power-up, software STORE/RECALL, HSB pin |
| Grade | — | Industrial |