H5CG24AGBDX022N - 16Gb DDR5 SDRAM DRAM | SK hynix
料号： H5CG24AGBDX022N ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
H5CG24AGBDX022N 概述
A DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, a type of volatile memory IC that stores data in capacitor-based cells and transfers two words per clock cycle. In the system hierarchy, a DDR5 SDRAM chip sits below the memory module (DIMM) level and above the memory cell array; multiple DRAM components are mounted onto modules that plug into a platform's memory controller channel. DDR5, standardized by JEDEC, moved the power management IC (PMIC) onto the module, raised bank-group parallelism, and introduced on-die ECC to raise reliability at higher densities.
Key differentiators of this generation include the doubled bank groups compared with DDR4, an on-die ECC engine that corrects internal cell errors before they reach the bus, and decision-feedback equalization (DFE) on the data path to sustain high data-rate signaling. The per-chip data width is , which determines bus width when chips are paralleled on a module.
Architecturally, the device uses a bank-group architecture with multiple independent banks per group, allowing interleaved accesses that hide row-activation latency (tRCD) and raise effective bandwidth. The data interface is DDR with as the speed bin implied by the X022 speed code, and the core operates from the supply rail regulated by the module PMIC.
Typical applications include PC client UDIMM/SODIMM modules, server RDIMM/LRDIMM builds, embedded memory down designs on COM Express and ATX carrier boards, and AI accelerator or network appliance memory subsystems where per-GB cost and bandwidth matter.
A key design consideration is signal integrity: DDR5 fly-by routing, on-die termination (ODT) settings, and reference voltage (VREFCA) training must follow the memory controller's initialization sequence; a wrong ODT profile is the most common cause of training failure at high data rates.
This page adds value beyond the raw datasheet by synthesizing drop-in alternatives within the same SK hynix H5CG2x family, distributor sourcing context, and practical design notes drawn from real deployment practice.
直接替换替代料： H5CG24AGBDX022N ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5CG24AGBDX022N （相同外形与封装尺寸） ——差异在于 Interface, Density, ECC, Product Family, Mounting Type.
快速对比工具——选择替代料号进行并排对比：
H5CG24AGBDX022
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →H5CG26AGBDX021
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$4.95 / 个
查看数据手册 →H5CG28AGBDX022
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1 / 个
查看数据手册 →H5CG34MEBDX030N
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$4.42 / 个
查看数据手册 →H5CG44AGBDX018N
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →H5CG46AGBDX015N
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
H5CG48AGBDX014N
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$70 / 个
查看数据手册 →H5CG24AGBDX022N 最大额定值与电气特性
| Manufacturer | SK hynix |
| Product Family | H5CG24 series DDR5 SDRAM |
| 存储器类型 | DDR5 SDRAM |
| Density | 16 Gbit (2 GB) |
| 安装类型 | Surface Mount |
| On-Die ECC | Yes (DDR5 generation feature) |
| 接口类型 | SSTL / POD (DDR5 per JEDEC) |
| RoHS 状态 | unknown |
H5CG24AGBDX022N standard 引脚配置指南
H5CG24AGBDX022N（standard 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5CG24AGBDX022N.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5CG24AGBDX022N 适用于 6 应用s: PC Client DDR5 UDIMM / SODIMM Modules, Server RDIMM / LRDIMM Memory Subsystems, Embedded Memory-Down Industrial x86 Boards, AI Accelerator and GPU Memory Subsystems, Networking and Telecom Appliance Memory, Automotive and Edge Compute Modules.
PC Client DDR5 UDIMM / SODIMM Modules
The H5CG24AGBDX022N is a primary building block for consumer and commercial PC DDR5 UDIMM and SODIMM modules, where eight or sixteen 16 Gb components deliver 16 GB or 32 GB per module across two independent 32-bit sub-channels. Its on-die ECC corrects internal cell errors before they reach the module bus, raising effective reliability without the cost of ECC-capable chipsets. Because the DDR5 PMIC sits on the module, board designers integrate the component with standard SPD hub wiring and JEDEC fly-by command/address routing. At X022 speed-code timing, memory controllers train ODT and VREF automatically, so this component fits mainstream Intel and AMD client platforms with no firmware-level customization beyond standard SPD programming.
推荐
Server RDIMM / LRDIMM Memory Subsystems
In server platforms, the H5CG24AGBDX022N populates registered (RDIMM) and load-reduced (LRDIMM) DDR5 modules where per-GB cost and channel bandwidth are the dominant metrics. The 16 Gb density allows single-rank 32 GB RDIMMs built from sixteen x8 components, and the DDR5 sub-channel architecture doubles effective concurrency per DIMM versus DDR4. On-die ECC plus module-level RCD register buffering lets hyperscale designs hit the memory bandwidth targets of modern Xeon and EPYC memory controllers. Designers should program the SPD/PMIC configuration for the X022 speed bin and validate thermal derating because dense server memory channels see sustained junction temperatures that require airflow-based derating per the SK hynix thermal guidelines.
推荐
Embedded Memory-Down Industrial x86 Boards
Industrial COM Express, SMARC, and ATX carrier designs increasingly mount DDR5 components directly on the baseboard (memory-down) instead of using SODIMM sockets, saving height and improving vibration immunity. The H5CG24AGBDX022N fits this pattern because its surface-mount package tolerates reflow assembly and its dual 32-bit sub-channels pair cleanly with embedded x86 memory controllers that natively support DDR5 sub-channel training. A two-chip build provides 4 GB; eight chips provide 16 GB. Key layout requirements are matched-length CA routing, per-byte-lane DQ/DQS symmetry, and an on-board DDR5 PMIC supplying the correct core and VDDQ rails; the component's on-die ECC then adds industrial-grade error robustness without external logic.
推荐
AI Accelerator and GPU Memory Subsystems
AI inference and training cards pair HBM with large DDR5 host-memory buffers, and the H5CG24AGBDX022N serves those DDR5-side capacity pools. The X022 speed code targets the mainstream DDR5 data-rate range that host CPUs and accelerator-side DMA engines sustain, while on-die ECC protects long-running training jobs from silent cell errors that would otherwise corrupt checkpoints. The component's bank-group parallelism keeps random-access latency low during embedding lookups and weight streaming from DDR5 into SRAM/HBM staging. Designers mounting this component on accelerator boards should size the DDR5 PMIC for peak burst current and follow the controller's DFE training sequence to maintain eye margins at high data rates across temperature.
推荐
Networking and Telecom Appliance Memory
Routers, switches, and 5G telecom appliances use DDR5 memory-down banks for packet buffering tables, control-plane state, and logging, where the H5CG24AGBDX022N provides 2 GB per component at mainstream DDR5 speeds. The dual sub-channel architecture lets network processors split one component between a data-plane buffer engine and a control-plane CPU share, reducing total component count versus DDR4 designs. On-die ECC addresses bit-error accumulation in always-on equipment where unrepaired soft errors would otherwise require watchdog resets. Because networking appliances run 24/7 at elevated ambient temperatures, designers should apply the SK hynix thermal derating guidance and validate refresh behavior (including any extended-temperature refresh modes) at the maximum operating temperature of the enclosure.
推荐
Automotive and Edge Compute Modules
Edge compute and ADAS-adjacent platforms require high-bandwidth volatile memory with strong error robustness, and the H5CG24AGBDX022N supplies 16 Gb DDR5 capacity in a surface-mount package suitable for soldered, vibration-tolerant assemblies. Its on-die ECC reduces uncorrected-bit-error exposure in safety-relevant workloads, and the DDR5 sub-channel split lets one component serve both an image-processing ISP pipeline and a host CPU concurrently. Note that this standard-range part is not the automotive-qualified SKU; designs targeting AEC-Q100-grade deployments should confirm qualification status with SK hynix or select the automotive variant of the H5CG family. Layout should follow JEDEC DDR5 fly-by routing with careful impedance control on the CA bus to pass training margins across the full temperature range.
推荐
推荐产品汇总
工程参考数据： H5CG24AGBDX022N ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5CG24AGBDX022 | H5CG26AGBDX021 | H5CG28AGBDX022 | H5CG34MEBDX030N |
|---|---|---|---|---|---|
| Package | FBGA (DDR5) | FBGA (DDR5) - same | FBGA (DDR5) - same | FBGA (DDR5) - same | FBGA (DDR5) - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Speed Code | X022 | X022 | X021 | X022 | X030 |
| Die Revision Suffix | N | none | none | none | N |
| On-Die ECC | Yes | Yes | Yes | Yes | Yes |
关键差异点
- Identical-die sibling availability for dual sourcing （对比 H5CG24AGBDX022)
- Newer die generation in same footprint （对比 H5CG28AGBDX022)
- On-die ECC at 16 Gb density （对比 Older DDR4 16 Gb components)
设计说明
DDR5 routes each DRAM as two independent 32-bit sub-channels with a multiplexed CA bus on fly-by topology. Keep CA trace skew within the controller's training window, set on-die termination (ODT) per the controller's recommendation table, and implement VREFCA training as part of the initialization sequence. A wrong ODT profile is the most common cause of first-boot training failure at X022-class data rates; re-run read/write leveling after any temperature-relevant mechanical change such as heatsink addition.
DDR5 moves power regulation from the platform to the memory subsystem: a module-level or on-board DDR5 PMIC must supply the core and VDDQ rails with correct sequencing and transient response sized for peak burst current. Estimated: for a 16 GB module built from eight 16 Gb components, peak DDR5 bus current can reach several amperes per rail during all-bank bursts; consult the SK hynix DDR5 PMIC reference design on the SK hynix Downloads portal for recommended inductor and output capacitor sizing. Never power DDR5 rails from fixed DDR4 regulators - voltage levels differ by generation.
Do not substitute DDR5 speed codes silently: the X022 code on H5CG24AGBDX022N defines the supported bin, and mixing X021/X030/X014 components on one module forces the whole module to the slowest bin and can break SPD-dependent training. Always program the SPD hub with the installed component's exact MPN and bin, and re-run full memory test (BIST/memtest) after any die-revision suffix change, including the N-suffix variants, before release to production.
Follow JEDEC DDR5 module reference routing: per-byte-lane DQ/DQS/DM symmetry, matched-length CA fly-by stubs, and controlled impedance on all high-speed nets. Place decoupling capacitors for both rails as close to each component ball as the fanout allows, and reference DDR5 nets to solid planes to limit crosstalk between adjacent sub-channels. Estimated: keep DQ length mismatch within the controller's per-byte skew budget (typically a few mils at module level; verify against your memory controller's routing guide).
合规信息
Compliance data was not present in the verified web data as of 2026-09-05. Consult the official SK hynix product page or Downloads portal for RoHS/REACH declarations for this MPN.
