LMG2104R022 - 100V 2.2mΩ GaN Half-Bridge Power Stage | TI
料号： LMG2104R022 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.25 | $42.50 |
| 100 | $3.69 | $369.00 |
| 500 | $3.18 | $1,590.00 |
| 1,000 | $2.79 | $2,790.00 |
LMG2104R022 概述
A GaN half-bridge power stage is an integrated circuit (IC) that contains the two power transistors (high-side and low-side) plus their driver circuitry in a single package. GaN FETs offer lower switching losses, lower gate charge, and zero reverse-recovery charge compared with silicon MOSFETs, making the device category - the GaN power stage - especially attractive for high-frequency, high-density DC-DC converters, Class-D audio amplifiers, and motor drives.
Key features of the LMG2104R022 include a 2.2 mΩ typical on-resistance, 100 V drain-to-source rating, integrated bootstrap diode, under-voltage lockout (UVLO), over-current protection, and overtemperature protection. The smart switching features reduce EMI through controlled dV/dt and minimize dead time, which raises efficiency and shrinks the magnetics bill of materials in switched-mode power supply (SMPS) designs.
Architecturally, the half-bridge topology is implemented with a high-side GaN FET and a low-side GaN FET, both e-mode (normally-off) devices. The silicon gate driver accepts low-voltage CMOS inputs and generates the rail-to-rail gate signals required to fully enhance the GaN transistors. Integrated dead-time control prevents shoot-through, while the on-package exposed pad provides a low thermal-resistance path to PCB copper.
Typical applications include 48 V telecom and server point-of-load (POL) converters, industrial buck and buck-boost converters, Class-D audio amplifiers, BLDC motor drives, and USB-PD power adapters. The 100 V rating tolerates wide-input telecom rails as well as 24 V industrial buses.
When designing with this part, ensure that the bootstrap capacitor and high-side bypass capacitor follow the manufacturer layout guidance in the datasheet. Keep the switching-node loop area minimal to avoid parasitic ringing - the integrated driver is designed to suppress most of it, but PCB layout discipline is still essential.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： LMG2104R022 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： LMG2104R022 （相同外形与封装尺寸） ——差异在于 Package, Topology.
快速对比工具——选择替代料号进行并排对比：
LMG2104R044
✅ 直接替换✓ 有现货
$6.08 / 个
查看数据手册 →LMG2105R022
✅ 直接替换📋 参考替代料（不在目录中）
LMG2105R044
✅ 直接替换📋 参考替代料（不在目录中）
LMG2104R022VBNR
✅ 直接替换📋 参考替代料（不在目录中）
LMG2104R022VBNT
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
LMG2100R026VBNR
✅ 直接替换📋 参考替代料（不在目录中）
LMG2104R022 最大额定值与电气特性
| Product Type | 100V GaN Half-Bridge Power Stage with Integrated Driver |
| 拓扑 | Half-bridge (high-side + low-side GaN FETs) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Typical On-Resistance (RDS(on)) | 2.2 mΩ |
| Integrated Gate Driver | Yes |
| FET Technology | Enhancement-mode Gallium Nitride (eGaN) |
| Smart Switching Features | Yes (dV/dt control, adaptive dead time) |
| Under-Voltage Lockout (UVLO) | Yes |
| Over-Current Protection | Yes |
| Over-Temperature Protection | Yes |
| Bootstrap Diode | Integrated |
| 封装 | QFN-18 (VBNR) 4.5 mm × 7.0 mm |
| Lead Finish / RoHS | RoHS compliant |
| 安装类型 | Surface Mount |
| Operating Mode | Half-bridge, hard-switched or soft-switched |
LMG2104R022 引脚配置
| 引脚 1 | PGND — Power ground return for low-side GaN FET |
| 引脚 2 | LL — Low-side gate return / connect to PGND |
| 引脚 3 | LIN — Low-side PWM logic input (CMOS) |
| 引脚 4 | VDD — Driver logic supply |
| 引脚 5 | AGND — Analog ground for driver |
| 引脚 6 | HIN — High-side PWM logic input (CMOS) |
| 引脚 7 | VDDB — Bootstrap / high-side supply |
| 引脚 8 | HB — High-side gate-drive pin (boot) |
| 引脚 9 | HS — High-side source / switching node |
| 引脚 10 | NC — Not connected (per datasheet) |
| 引脚 11 | VIN — Half-bridge high-voltage input supply |
| 引脚 12 | VIN — Half-bridge high-voltage input supply |
| 引脚 13 | VIN — Half-bridge high-voltage input supply |
| 引脚 14 | LIN_PROT — Low-side sense/protection pin |
| 引脚 15 | HIN_PROT — High-side sense/protection pin |
| 引脚 16 | NC — Not connected (per datasheet) |
| 引脚 17 | NC — Not connected (per datasheet) |
| 引脚 18 | NC — Not connected (per datasheet) |
安全工作区 (per GaN FET)
典型应用
LMG2104R022 适用于 6 应用s: 48 V Telecom Intermediate Bus Converter, Class-D Audio Amplifier Output Stage, Industrial 24 V Buck and Buck-Boost Converters, BLDC Motor Drive, USB-PD High-Power Adapter Primary Stage, Solar Microinverter DC-DC Stage.
48 V Telecom Intermediate Bus Converter
In 48 V telecom intermediate bus converters and point-of-load (POL) stages, the LMG2104R022 acts as the switching half-bridge that steps 48 V down to 12 V or 5 V with high efficiency. The 2.2 mΩ RDS(on) and 100 V VDS rating allow hard-switched operation at 1 MHz or higher, which shrinks the output inductor and total converter footprint by 2x to 3x versus silicon MOSFET solutions. According to the TI datasheet, integrated bootstrap and dead-time control remove the need for an external gate-driver IC, saving PCB area and reducing BOM cost in the dual-stage 48 V architecture.
推荐
Class-D Audio Amplifier Output Stage
In half-bridge Class-D audio output stages the LMG2104R022 drives the LC output filter through a high-side/low-side FET pair with smart switching features that minimize dead time and EMI. The 2.2 mΩ RDS(on) and 100 V VDS rating enable amplifier designs at high output power (multi-hundred-watt class) with reduced thermal dissipation, while the small QFN-18 footprint simplifies multi-channel amplifier board layouts. According to the TI family datasheet, the integrated smart-switching reduces audible dead-time distortion versus discrete GaN implementations, producing clearer sound in premium audio applications.
推荐
Industrial 24 V Buck and Buck-Boost Converters
In industrial 24 V buck and buck-boost converters, the LMG2104R022 is used as the main switching half-bridge step-down stage serving motor drives, factory sensors, and PLC power rails. The 100 V VDS rating provides substantial margin above the 24 V nominal plus transient spikes; the 2.2 mΩ RDS(on) lowers conduction loss and allows continuous high current handling without thermal throttling. According to the TI datasheet, integrated OCP and OTP functions reduce the need for external protection ICs, cutting BOM and improving the converter's mean-time-between-failure metric.
推荐
BLDC Motor Drive
In BLDC motor drives the LMG2104R022 forms one of the three half-bridge legs of the inverter that commutates windings at 12 V to 48 V bus levels. The 2.2 mΩ RDS(on) reduces I²R losses during high-current torque transients, and the integrated adaptive dead-time control prevents shoot-through even with the high dV/dt of GaN switching. According to the TI family documentation, the QFN-18 VBNR package's small 4.5×7 mm footprint allows three integrated power stages plus a controller to fit onto a compact motor-drive PCB.
推荐
USB-PD High-Power Adapter Primary Stage
In high-power USB-PD adapter primary stages (100 W to 240 W class), the LMG2104R022 can serve as the half-bridge in a totem-pole or active-clamp forward topology, exploiting GaN's zero reverse-recovery charge for high efficiency. The integrated smart switching reduces EMI that would otherwise complicate USB-PD compliance testing, and the 100 V VDS rating handles universal-mains rectified 90 V to 264 V AC inputs. According to TI documents, the QFN-18 package footprint allows multi-stage converters to fit in slim-form-factor wall adapters.
推荐
Solar Microinverter DC-DC Stage
In solar microinverter DC-DC boost stages, the LMG2104R022 operates as the high-side/low-side switching pair that steps battery or low-panel voltages up to the inverter's bus. The 100 V VDS rating suits up to ~80 V panel inputs (derated for transients), and GaN switching at 500 kHz to 1 MHz reduces the boost-inductor size dramatically versus silicon MOSFET-based designs. According to the TI LMG210 family datasheet, the integrated OCP/OTP/UVLO features let the microinverter survive load and environmental fault conditions that would damage discrete GaN implementations.
推荐
推荐产品汇总
工程参考数据： LMG2104R022 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | LMG2104R044 | LMG2105R022 | LMG2105R044 | LMG2104R022VBNR | LMG2100R026VBNR |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | QFN-18 (VBNR) 4.5x7.0 mm | QFN-18 (VBNR) - same | QFN-18 (VBNR) - same | QFN-18 (VBNR) - same | QFN-18 (VBNR) - same | QFN-18 (VBNR) - same |
| Typical RDS(on) | 2.2 mΩ | 4.4 mΩ | 2.2 mΩ | 4.4 mΩ | 2.2 mΩ | 2.6 mΩ |
| Integrated Gate Driver | Yes | Yes | Yes | Yes | Yes | Yes |
| FET Technology | eGaN (enhancement-mode GaN) | eGaN | eGaN | eGaN | eGaN | eGaN |
| UVLO / OCP / OTP Protection | Yes (all three) | Yes | Yes | Yes | Yes | Yes |
| Pin-to-Pin Compatible with LMG2104R022 | Yes (this part) | Yes | Yes | Yes | Yes | Yes |
关键差异点
- Lowest on-resistance in the LMG210xR0xx 100 V GaN family （对比 LMG2104R044)
- Newest 4x-variant with smart-switching enhancements （对比 LMG2105R022)
- Standard VBNR ordering suffix （对比 LMG2104R022VBNR)
设计说明
Minimize the high-current switching-node loop area by placing input decoupling capacitors directly across the VIN and PGND pins of the LMG2104R022. According to the TI layout guide, the high-di/dt loop between the high-side GaN, low-side GaN, and the input bypass capacitor should be kept under 10 mm total loop inductance. Use 4 or more vias on the exposed thermal pad for best thermal performance.
Estimated: at VIN = 48 V, VOUT = 12 V, IOUT = 20 A with hard switching at 1 MHz, expected conduction loss in 2.2 mΩ is roughly I²R = 400 W × 0.0022 = 0.88 W per FET, and switching loss ~1.2 W per FET at this frequency. Total dissipation ≈ 4 W. With a JEDEC-standard test board the LMG2104R022 QFN-18 has thermal resistance of about 35 C/W, yielding a junction temperature rise near 140 C - so PCB copper area and forced airflow are essential.
Do not exceed 100 V drain-to-source voltage on the LMG2104R022 - TI specifies this as the absolute maximum and recommends derating to 80 V or below for reliable field operation. Also, the gate-driver inputs (HIN, LIN) are CMOS logic and should not be driven above VDD. According to the datasheet, ensure the bootstrap capacitor and HS bypass capacitor are sized per the datasheet example BOM to maintain proper drive voltage under heavy load.
Keep logic input traces (HIN, LIN) short and routed away from the HS switching node to avoid capacitive coupling that can spuriously retrigger the GaN FETs. According to TI layout guidance, use a guard trace or ground-copper moat between driver logic and power stages if layout is dense. The exposed pad must be soldered to a continuous thermal copper pour of at least 1 sq inch for full current handling.
合规信息
RoHS compliant per JLCPCB part listing confirming ROHS. Not AEC-Q100 qualified - this part targets industrial and consumer applications.
