LMG2104R022 vs LMG2104R044 对比

详细并排对比 LMG2104R022 出自 Texas Instruments 和 LMG2104R044 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
LMG2104R022 LMG2104R022 - 100V 2.2mΩ GaN Half-Bridge Power Stage | TI

LMG2104R022 - 100V 2.2mΩ GaN Half-Bridge Power Stage | TI

LMG2104R022 ✓ 量产中
Texas Instruments
LMG2104R044 LMG2104R044 - 100V 4.4mΩ GaN Half-Bridge Power Stage | TI

LMG2104R044 - 100V 4.4mΩ GaN Half-Bridge Power Stage | TI

LMG2104R044 ✓ 量产中

规格对比

参数 LMG2104R022 LMG2104R044
品牌 Texas Instruments Texas Instruments
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.79 $6.08
Product Type 100V GaN Half-Bridge Power Stage with Integrated Driver —
拓扑 Half-bridge (high-side + low-side GaN FETs) Half-Bridge (high-side + low-side)
Drain-to-Source Voltage (VDS) 100 V —
Typical On-Resistance (RDS(on)) 2.2 mΩ —
Integrated Gate Driver Yes Yes
FET Technology Enhancement-mode Gallium Nitride (eGaN) —
Smart Switching Features Yes (dV/dt control, adaptive dead time) —
Under-Voltage Lockout (UVLO) Yes —
Over-Current Protection Yes —
Over-Temperature Protection Yes —
Bootstrap Diode Integrated —
封装 QFN-18 (VBNR) 4.5 mm × 7.0 mm QFN 5 mm x 4 mm
Lead Finish / RoHS RoHS compliant —
安装类型 Surface Mount Surface Mount
Operating Mode Half-bridge, hard-switched or soft-switched —
Switch Type — Enhancement-mode GaN FET
Drain-Source Blocking Voltage — 100 V
Typical Rds(on) per FET — 4.4 mΩ
Integrated Bootstrap Regulator — Yes
Logic Input Compatibility — TTL, 3.3 V and 5 V
Dead-Time Control — Smart-Switching auto dead-time
Undervoltage Lockout (UVLO) — Yes (VCC and bootstrap)
热关断 — Yes
Short-Circuit / Overcurrent Protection — Yes
工作温度 — -40C to +125C
RoHS 状态 — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价