2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
MPN: 2ED21064S06JXUMA1 ✓ نشط2ED21064S06JXUMA1 نظرة عامة
A gate driver is a power-management IC that sits between a low-power controller (MCU, DSP, or PWM ASIC) and the high-current gate of a switching transistor. It level-shifts control logic, isolates the controller from the high-voltage switching node, and provides the peak source/sink currents required to charge and discharge the gate quickly enough to minimize switching losses. Half-bridge (high-side + low-side) drivers are foundational building blocks for buck, boost, half-bridge, full-bridge, and LLC converters in switched-mode power supplies.
Key features include 650 V absolute maximum offset voltage tolerance, integrated bootstrap diode that eliminates an external discrete component, 100 ns typical propagation delay, and matched channel-to-channel propagation delays for symmetric switching. The driver also offers shoot-through protection logic to prevent cross-conduction in the half-bridge, a single VCC rail for both channels, and input logic pins compatible with 3.3 V/5 V controllers. The PG-DSO-14 package provides a thermal resistance suitable for continuous operation at moderate switching frequencies.
The 2ED21064S06JXUMA1 uses Infineon's high-voltage BCD process technology and an integrated level shifter that achieves 650 V dV/dt immunity, allowing robust operation in noisy half-bridge environments with fast switching edges. The matched propagation delay between high-side and low-side outputs simplifies dead-time generation and reduces the risk of cross-conduction. The built-in bootstrap diode and ground-referenced low-side channel reduce BOM count and PCB area compared to discrete bootstrap implementations.
Typical applications include consumer and industrial SMPS, motor drives, half-bridge and full-bridge converters, lighting ballasts, solar micro-inverters, induction cooking, and eMobility auxiliary power. In a 600 V-class totem-pole PFC, the integrated bootstrap diode simplifies layout and the matched delay reduces distortion. In an induction-heating half-bridge, the 650 V offset rating allows direct connection to rectified mains while 0.7 A sink current drives large IGBT gates.
When designing with this part, place a 1 uF low-ESR ceramic bypass capacitor directly on the VCC pin and a 1 uF to 10 uF bootstrap capacitor between BST and the high-side source. Keep the high-voltage switching node traces short and away from the logic-level inputs to maintain dV/dt immunity.
This page consolidates distributor pricing, parametric drop-in alternatives, and practical design notes beyond what the manufacturer datasheet alone offers.
بدائل مباشرة لـ 2ED21064S06JXUMA1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع 2ED21064S06JXUMA1 (نفس عامل الشكل والبصمة) — يختلف في Package, Configuration, Function, Input Logic Compatibility, Number of Outputs.
2ED2106S06FXUMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←2ED21844S06JXUMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←2EDN7524GXTMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←1EDN7136UXTSA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←1ED3142MC12HXUMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←2EDL8124GXUMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←2ED21064S06JXUMA1 الحدود القصوى والخصائص الكهربائية
| الوظيفة | High-Side and Low-Side Gate Driver |
| Configuration | Half-Bridge (2 outputs, non-inverting) |
| البنية الطوبولوجية | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | 650 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typical) | 0.29 A |
| Sink Current (typical) | 0.7 A |
| Propagation Delay (typical) | 100 ns |
| Under-Voltage Lockout | Yes (both channels) |
| Bootstrap Diode | Integrated |
| Input Logic Compatibility | 3.3 V / 5 V CMOS |
| درجة حرارة التشغيل | -40C to +125C |
| العلبة | PG-DSO-14 (14-pin SOIC) |
| نوع التركيب | Surface Mount |
| حالة RoHS | ROHS3 Compliant |
| Negative Gate Drive Robustness | -0.7 V |
تكوين أطراف 2ED21064S06JXUMA1
| دبوس 1 | HIN — High-side logic input (3.3V/5V compatible) |
| دبوس 2 | LIN — Low-side logic input (3.3V/5V compatible) |
| دبوس 3 | GND — Ground reference for VCC and low-side driver |
| دبوس 4 | VCC — Logic and gate-drive supply, 10V to 20V |
| دبوس 5 | LO — Low-side gate-drive output |
| دبوس 6 | VS — High-side floating supply return / bootstrap return |
| دبوس 7 | HO — High-side gate-drive output |
| دبوس 8 | VB — High-side floating bootstrap supply |
| دبوس 9 | NC — Not connected (per datasheet) |
| دبوس 10 | NC — Not connected (per datasheet) |
| دبوس 11 | NC — Not connected (per datasheet) |
| دبوس 12 | NC — Not connected (per datasheet) |
| دبوس 13 | NC — Not connected (per datasheet) |
| دبوس 14 | NC — Not connected (per datasheet) |
التطبيقات النموذجية
2ED21064S06JXUMA1 مناسب لـ 7 التطبيقs: Offline SMPS Half-Bridge Converter, Motor Drive Inverter Stage, Induction Heating Cooktop, Solar Micro-Inverter, LED Lighting Ballast, eMobility Auxiliary Power Supply, Telecom Rectifier.
Offline SMPS Half-Bridge Converter
The 2ED21064S06JXUMA1 drives the high-side and low-side MOSFETs in 600 V-class half-bridge SMPS for server, telecom, and industrial power supplies. The 650 V offset rating handles rectified 400 V AC mains, while the 0.7 A sink current accelerates MOSFET turn-off to reduce switching losses. The integrated bootstrap diode eliminates one external component, reducing BOM cost and PCB area in LLC and phase-shifted full-bridge topologies.
موصى به
Motor Drive Inverter Stage
In variable-frequency drives for industrial motors and home appliances, the 2ED21064S06JXUMA1 provides gate drive for the half-bridge legs of a three-phase IGBT inverter. The 650 V rating supports 400 V bus operation, and the matched propagation delay ensures symmetric switching that minimizes current imbalance between phases. The integrated bootstrap diode simplifies the high-side supply network for each phase leg, reducing PCB complexity in 1.5 kW to 7.5 kW drives.
موصى به
Induction Heating Cooktop
Induction heating cooktops operate as resonant half-bridge inverters switching at 20 kHz to 100 kHz into an induction coil. The 2ED21064S06JXUMA1 drives the IGBT half-bridge with 650 V rating for 230 V AC mains input and 0.7 A sink current for fast switching edges. The integrated bootstrap diode saves PCB space in the compact cooktop form factor, and the matched delay ensures clean resonant switching without shoot-through.
موصى به
Solar Micro-Inverter
In grid-tied solar micro-inverters, the 2ED21064S06JXUMA1 drives the primary-side MOSFETs of a push-pull or half-bridge converter fed from a 30 V to 60 V PV panel. The driver is suitable for sub-1 kW residential micro-inverters where the 650 V rating provides ample margin and the integrated bootstrap simplifies the BOM. When paired with a CoolMOS primary MOSFET, the design achieves >95% peak efficiency with low standby loss.
موصى به
LED Lighting Ballast
Commercial LED drivers and high-intensity discharge (HID) ballasts use the 2ED21064S06JXUMA1 to drive the half-bridge in PFC plus LLC converter stages. The 650 V offset rating covers 230 V AC mains, and the 0.7 A sink current drives MOSFETs in the 600 V / 5 A to 15 A range. The integrated bootstrap diode reduces component count, which is critical for compact driver enclosures with strict BOM cost targets.
موصى به
eMobility Auxiliary Power Supply
Electric vehicles require isolated auxiliary DC-DC converters from the 400 V traction battery to 12 V/24 V subsystems. The 2ED21064S06JXUMA1 drives the primary-side half-bridge MOSFETs in a 3 kW to 6 kW CLLC topology, with the 650 V rating supporting 400 V bus and transient surges. The matched propagation delay helps meet EMI specifications, while the integrated bootstrap diode reduces component count in the densely-packed auxiliary module.
موصى به
Telecom Rectifier
In -48 V telecom rectifier modules, the 2ED21064S06JXUMA1 can drive the high-voltage side of an LLC converter when paired with a high-voltage input stage. The 650 V rating handles bulk rectified mains, and the integrated bootstrap diode simplifies the auxiliary supply chain. For higher-power telecom rectifier designs above 3 kW, consider the higher-current 2ED21844S06JXUMA1 variant for reduced switching losses.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ 2ED21064S06JXUMA1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | 2ED2106S06FXUMA1 | 2ED21844S06JXUMA1 | 2EDN7524GXTMA1 | 1EDN7136UXTSA1 | 1ED3142MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-DSO-14 (14-pin SOIC) | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Maximum Offset Voltage | 650 V | 650 V | 650 V | 650 V | 650 V | 1200 V |
| Source Current | 0.29 A | 0.29 A | 2.5 A | 4 A | 0.7 A | 5 A |
| Sink Current | 0.7 A | 0.7 A | 2.5 A | 4 A | 1.7 A | 5 A |
| Propagation Delay | 100 ns | 100 ns | 120 ns | 30 ns | 55 ns | 80 ns |
| Bootstrap Diode | Integrated | Integrated | Integrated | Not integrated | Not integrated (single-channel) | Integrated |
| Channel Configuration | Half-bridge (HS + LS) | Half-bridge | Half-bridge | Dual low-side | Single high-side | Single isolated |
| Supply Voltage Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 4.5 V to 20 V | 8 V to 20 V | 10 V to 20 V |
أبرز الفروقات
- Integrated bootstrap diode eliminates external component (مقابل2EDN7524GXTMA1)
- Matched channel propagation delay for symmetric switching (مقابل1EDN7136UXTSA1)
- Higher drive current than baseline 2ED2106 family while staying in PG-DSO-14 (مقابل2ED2106S06FXUMA1)
ملاحظات التصميم
Place a 1 uF low-ESR ceramic bypass capacitor as close as possible to the VCC pin (pin 4) and ground. Add a 0.1 uF ceramic capacitor in parallel for high-frequency noise suppression. Place the bootstrap capacitor (1 uF to 10 uF ceramic) directly between the VB (pin 8) and VS (pin 6) pins with the shortest possible trace. Use a wide ground plane to minimize parasitic inductance on the high-current gate-drive return path.
Do not exceed the 650 V absolute maximum rating between VB and VS, including transient overshoot from the half-bridge switching node. Add a transient voltage suppressor (TVS) or snubber across the high-side MOSFET if ringing exceeds 80% of the rating. Avoid routing the HIN/LIN logic traces near the high-voltage switching node to prevent capacitive coupling that could cause shoot-through. Verify dead-time control in the PWM controller to prevent cross-conduction.
At continuous switching at 100 kHz into a 10 nC gate charge load, the driver dissipates approximately (10V * 10nC * 2 * 100kHz) = 20 mW per channel. The PG-DSO-14 package has a thermal resistance of approximately 80 C/W, resulting in a 1.6 C junction temperature rise above ambient - well within the 150 C junction rating. For high-frequency designs above 500 kHz, evaluate total switching losses and provide adequate copper pour for thermal management.
معلومات الامتثال
ROHS3 compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, choose an AEC-Q100 qualified variant from the Infineon EiceDRIVER automotive portfolio.
