2EDL8124GXUMA1 vs 1EDN7126GXTMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ 2EDL8124GXUMA1 بواسطة Infineon و 1EDN7126GXTMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
2EDL8124GXUMA1 ✓ نشطمقارنة المواصفات
| المعامل | 2EDL8124GXUMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Driver Configuration | Half-bridge (high-side + low-side) | — |
| Input Type | Non-inverting, TTL-compatible with hysteresis | Truly Differential Input (TDI) |
| Number of Drivers | 2 | — |
| Peak Source Current | 3 A | 1.5 A |
| Peak Sink Current | 4 A | 1.5 A |
| Bootstrap Supply (VBS) Maximum | 120 V | — |
| VCC Supply Range | [DATA_NEEDED: VCC min/max typical range] | — |
| Isolation Type | Junction isolation (JI) | — |
| Bootstrap Diode | Integrated | — |
| Propagation Delay (typical) | < 50 ns | — |
| Delay Matching Between Channels | [DATA_NEEDED: delay matching spec in ns] | — |
| UVLO | Present on VCC and VBS | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range in C] | -40C to +125C |
| العلبة | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad | PG-VSON-10-4 |
| نوع التركيب | Surface Mount | Surface Mount |
| مستوى MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| حالة RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| الوظيفة | — | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Configuration | — | Non-Inverting |
| Channel Type | — | Single |
| Driven Supply Voltage | — | [DATA_NEEDED: VCC max value] |
| Common-Mode Voltage (CMR) | — | 200 V |
| Propagation Delay (Typ.) | — | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | — | [DATA_NEEDED: tr / tf typical value] |
| Reach | — | Compliant |
| Input Logic Compatibility | — | 3.3 V / 5 V TTL/CMOS (TDI) |