2EDL8124GXUMA1 vs 1EDN7126GXTMA1 Comparison

Detailed side-by-side comparison of 2EDL8124GXUMA1 by Infineon and 1EDN7126GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL8124GXUMA1 1EDN7126GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Configuration Half-bridge (high-side + low-side) —
Input Type Non-inverting, TTL-compatible with hysteresis Truly Differential Input (TDI)
Number of Drivers 2 —
Peak Source Current 3 A 1.5 A
Peak Sink Current 4 A 1.5 A
Bootstrap Supply (VBS) Maximum 120 V —
VCC Supply Range [DATA_NEEDED: VCC min/max typical range] —
Isolation Type Junction isolation (JI) —
Bootstrap Diode Integrated —
Propagation Delay (typical) < 50 ns —
Delay Matching Between Channels [DATA_NEEDED: delay matching spec in ns] —
UVLO Present on VCC and VBS —
Operating Temperature Range [DATA_NEEDED: operating temperature range in C] -40C to +125C
Package PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad PG-VSON-10-4
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Function — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Configuration — Non-Inverting
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Reach — Compliant
Input Logic Compatibility — 3.3 V / 5 V TTL/CMOS (TDI)

Datasheets & Resources

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