BFU520WF vs BFU520W مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BFU520WF بواسطة NXP Semiconductors و BFU520W بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | BFU520WF | BFU520W |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Transistors | Transistors |
| حالة دورة الحياة | نشط | نشط |
| Polarity | NPN | NPN |
| Technology | Wideband silicon RF BJT, 11 GHz fT silicon technology | Silicon wideband RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Collector-Emitter Voltage (VCEO rating) | 12 V | — |
| Maximum Collector Current (IC max) | 30 mA | — |
| Total Power Dissipation (Ptot) | 450 mW | [DATA_NEEDED: Ptot] |
| Transit Frequency (fT) | 11 GHz | — |
| Minimum Noise Figure (NFmin) | 0.6 dB at 900 MHz | — |
| Maximum Stable Gain (MSG) | 18.5 dB at 900 MHz | — |
| Application Frequency Range | Up to 2 GHz | Up to 2 GHz |
| العلبة | SOT323 (SC-70), 3-pin plastic | SOT323 (3-pin plastic) |
| نوع التركيب | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 qualified | — |
| حالة RoHS | Compliant | — |
| Family | BFU5 family, small signal to medium power up to 2 GHz | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | [DATA_NEEDED: hFE] |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: TJ range] |
| Collector-Base Capacitance (Ccb) | [DATA_NEEDED: Ccb] | — |
| AEC-Q101 | — | Qualified |
| Product Family | — | NXP BFU5 family |
| Primary Use Case | — | High speed, low noise small-signal to medium power RF applications |
| جهد المجمع-الباعث (Vceo) | — | [DATA_NEEDED: VCEO] |
| جهد المجمّع-القاعدة (Vcbo) | — | [DATA_NEEDED: VCBO] |
| Continuous Collector Current (IC) | — | [DATA_NEEDED: IC] |
| تردد الانتقال (ft) | — | [DATA_NEEDED: fT] |
| Noise Figure (NF) | — | [DATA_NEEDED: NF] |