BFU520WF vs BFU520W 比較
詳細並排比較 BFU520WF 由 NXP Semiconductors 與 BFU520W 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BFU520WF | BFU520W |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | NPN | NPN |
| Technology | Wideband silicon RF BJT, 11 GHz fT silicon technology | Silicon wideband RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Collector-Emitter Voltage (VCEO rating) | 12 V | — |
| Maximum Collector Current (IC max) | 30 mA | — |
| Total Power Dissipation (Ptot) | 450 mW | [DATA_NEEDED: Ptot] |
| Transit Frequency (fT) | 11 GHz | — |
| Minimum Noise Figure (NFmin) | 0.6 dB at 900 MHz | — |
| Maximum Stable Gain (MSG) | 18.5 dB at 900 MHz | — |
| Application Frequency Range | Up to 2 GHz | Up to 2 GHz |
| 封裝 | SOT323 (SC-70), 3-pin plastic | SOT323 (3-pin plastic) |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 qualified | — |
| RoHS 狀態 | Compliant | — |
| Family | BFU5 family, small signal to medium power up to 2 GHz | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | [DATA_NEEDED: hFE] |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: TJ range] |
| Collector-Base Capacitance (Ccb) | [DATA_NEEDED: Ccb] | — |
| AEC-Q101 | — | Qualified |
| Product Family | — | NXP BFU5 family |
| Primary Use Case | — | High speed, low noise small-signal to medium power RF applications |
| 集極-射極電壓 (Vceo) | — | [DATA_NEEDED: VCEO] |
| 集極-基極電壓 (Vcbo) | — | [DATA_NEEDED: VCBO] |
| Continuous Collector Current (IC) | — | [DATA_NEEDED: IC] |
| 轉換頻率 (ft) | — | [DATA_NEEDED: fT] |
| Noise Figure (NF) | — | [DATA_NEEDED: NF] |