BFU520WF vs BFU520W तुलना
विस्तृत दोनों ओर की तुलना BFU520WF द्वारा NXP Semiconductors और BFU520W द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | BFU520WF | BFU520W |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | Transistors | Transistors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Polarity | NPN | NPN |
| Technology | Wideband silicon RF BJT, 11 GHz fT silicon technology | Silicon wideband RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Collector-Emitter Voltage (VCEO rating) | 12 V | — |
| Maximum Collector Current (IC max) | 30 mA | — |
| Total Power Dissipation (Ptot) | 450 mW | [DATA_NEEDED: Ptot] |
| Transit Frequency (fT) | 11 GHz | — |
| Minimum Noise Figure (NFmin) | 0.6 dB at 900 MHz | — |
| Maximum Stable Gain (MSG) | 18.5 dB at 900 MHz | — |
| Application Frequency Range | Up to 2 GHz | Up to 2 GHz |
| पैकेज | SOT323 (SC-70), 3-pin plastic | SOT323 (3-pin plastic) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 qualified | — |
| RoHS स्थिति | Compliant | — |
| Family | BFU5 family, small signal to medium power up to 2 GHz | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | [DATA_NEEDED: hFE] |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: TJ range] |
| Collector-Base Capacitance (Ccb) | [DATA_NEEDED: Ccb] | — |
| AEC-Q101 | — | Qualified |
| Product Family | — | NXP BFU5 family |
| Primary Use Case | — | High speed, low noise small-signal to medium power RF applications |
| कलेक्टर-एमिटर वोल्टेज (Vceo) | — | [DATA_NEEDED: VCEO] |
| कलेक्टर-बेस वोल्टेज (Vcbo) | — | [DATA_NEEDED: VCBO] |
| Continuous Collector Current (IC) | — | [DATA_NEEDED: IC] |
| ट्रांज़िशन फ्रीक्वेंसी (ft) | — | [DATA_NEEDED: fT] |
| Noise Figure (NF) | — | [DATA_NEEDED: NF] |