BFU520WF vs BFU520W مقایسه
مقایسه دقیق کنار به کنار BFU520WF توسط NXP Semiconductors و BFU520W توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بستهبندی، وضعیت چرخه عمر، قیمتگذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | BFU520WF | BFU520W |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دستهبندی | Transistors | Transistors |
| وضعیت چرخه عمر | فعال | فعال |
| Polarity | NPN | NPN |
| Technology | Wideband silicon RF BJT, 11 GHz fT silicon technology | Silicon wideband RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Collector-Emitter Voltage (VCEO rating) | 12 V | — |
| Maximum Collector Current (IC max) | 30 mA | — |
| Total Power Dissipation (Ptot) | 450 mW | [DATA_NEEDED: Ptot] |
| Transit Frequency (fT) | 11 GHz | — |
| Minimum Noise Figure (NFmin) | 0.6 dB at 900 MHz | — |
| Maximum Stable Gain (MSG) | 18.5 dB at 900 MHz | — |
| Application Frequency Range | Up to 2 GHz | Up to 2 GHz |
| بستهبندی | SOT323 (SC-70), 3-pin plastic | SOT323 (3-pin plastic) |
| نوع نصب | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 qualified | — |
| وضعیت RoHS | Compliant | — |
| Family | BFU5 family, small signal to medium power up to 2 GHz | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | [DATA_NEEDED: hFE] |
| محدوده دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: TJ range] |
| Collector-Base Capacitance (Ccb) | [DATA_NEEDED: Ccb] | — |
| AEC-Q101 | — | Qualified |
| Product Family | — | NXP BFU5 family |
| Primary Use Case | — | High speed, low noise small-signal to medium power RF applications |
| ولتاژ کلکتور-امیتر (Vceo) | — | [DATA_NEEDED: VCEO] |
| ولتاژ کلکتور-بیس (Vcbo) | — | [DATA_NEEDED: VCBO] |
| Continuous Collector Current (IC) | — | [DATA_NEEDED: IC] |
| فرکانس گذار (ft) | — | [DATA_NEEDED: fT] |
| Noise Figure (NF) | — | [DATA_NEEDED: NF] |