DMT10H015LCG-7 vs BSZ0901NSIATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ DMT10H015LCG-7 بواسطة Diodes Incorporated و BSZ0901NSIATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Diodes Incorporated
DMT10H015LCG-7 - 100V N-Channel MOSFET, 34A, V-DFN3333-8 | Diodes Inc
DMT10H015LCG-7 ✓ نشط
مقارنة المواصفات
| المعامل | DMT10H015LCG-7 | BSZ0901NSIATMA1 |
|---|---|---|
| العلامة التجارية | Diodes Incorporated | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| FET Type | N-Channel Enhancement Mode | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (Ta) | 9.4 A | — |
| Continuous Drain Current (Tc) | 34 A | — |
| Power Dissipation (Ta) | 1 W | — |
| العلبة | V-DFN3333-8 (3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| نوع التركيب | Surface Mount | Surface Mount |
| درجة حرارة التشغيل | -55C to +150C (junction, typical) | — |
| Technology | Trench MOSFET | OptiMOS trench N-channel MOSFET |
| Channel Polarity | N-Channel | — |
| عدد الأطراف | 8 | 8 |
| حالة RoHS | Compliant | Compliant |
| مستوى MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(ON) at 10V VGS | [DATA_NEEDED: typical on-resistance value] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Manufacturer Part Family | DMT10H015LCG | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| نطاق درجة حرارة التشغيل | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |