EP1M120F484C8A vs EP1M120F484C8ES مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ EP1M120F484C8A بواسطة Intel و EP1M120F484C8ES بواسطة Intel. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | EP1M120F484C8A | EP1M120F484C8ES |
|---|---|---|
| العلامة التجارية | Intel | Intel |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | Obsolete | Obsolete |
| Family | Mercury (EP1M) | ACEX 1M |
| Series | EP1M120 | — |
| System Gates | 120,000 | — |
| Logic Elements / Cells | 4,800 | — |
| Number of LABs/CLBs | 480 | — |
| Total RAM Bits | 49,152 | — |
| Number of User I/Os | 303 | — |
| Number of Transceivers | Integrated CDR-capable, up to 1.25 Gbps | — |
| Core Supply Voltage | 1.8 V | — |
| العلبة | 484-ball FC-FBGA (FineLine BGA) | 484-ball FineLine BGA |
| Package Pin Count | 484 | — |
| درجة حرارة التشغيل | 0 °C to +85 °C (commercial) | [DATA_NEEDED: industrial/commercial grade temp range] |
| Speed Grade | -8 (C8) | C8 (-8 speed bin) |
| Logic Family | CMOS | — |
| نوع التركيب | Surface Mount | Surface Mount (BGA) |
| حالة RoHS | [DATA_NEEDED: rohs_status] | [DATA_NEEDED] |
| Process Technology | [DATA_NEEDED: process_node] | 0.18 µm CMOS, SRAM-based |
| Manufacturer | — | Intel (formerly Altera) |
| Logic Elements / Gates | — | 120,000 (120K gates) |
| Embedded Logic Cells (EABs) | — | 4,800 |
| User I/O Pins | — | 303 |
| Sample Grade | — | ES (Engineering Sample) |
| Embedded RAM | — | ~104 Kbits across 12 RAM blocks |
| PLLs | — | 4 enhanced PLLs |
| I/O Standards | — | LVTTL, LVCMOS, True-LVDS, PCI |
| Operating Voltage (Core) | — | [DATA_NEEDED: core VCC range] |
| MultiVolt I/O Support | — | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant |
| Configuration Method | — | SRAM bitstream, JTAG/serial |