EP1M120F484C8A vs EP1M120F484C8ES Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1M120F484C8A sa pamamagitan ng Intel at EP1M120F484C8ES sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1M120F484C8A | EP1M120F484C8ES |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | Mercury (EP1M) | ACEX 1M |
| Series | EP1M120 | — |
| System Gates | 120,000 | — |
| Logic Elements / Cells | 4,800 | — |
| Number of LABs/CLBs | 480 | — |
| Total RAM Bits | 49,152 | — |
| Number of User I/Os | 303 | — |
| Number of Transceivers | Integrated CDR-capable, up to 1.25 Gbps | — |
| Core Supply Voltage | 1.8 V | — |
| Packhaging | 484-ball FC-FBGA (FineLine BGA) | 484-ball FineLine BGA |
| Package Pin Count | 484 | — |
| Temperature na Operasyon | 0 °C to +85 °C (commercial) | [DATA_NEEDED: industrial/commercial grade temp range] |
| Speed Grade | -8 (C8) | C8 (-8 speed bin) |
| Logic Family | CMOS | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Tindminan RoHS | [DATA_NEEDED: rohs_status] | [DATA_NEEDED] |
| Process Technology | [DATA_NEEDED: process_node] | 0.18 µm CMOS, SRAM-based |
| Manufacturer | — | Intel (formerly Altera) |
| Logic Elements / Gates | — | 120,000 (120K gates) |
| Embedded Logic Cells (EABs) | — | 4,800 |
| User I/O Pins | — | 303 |
| Sample Grade | — | ES (Engineering Sample) |
| Embedded RAM | — | ~104 Kbits across 12 RAM blocks |
| PLLs | — | 4 enhanced PLLs |
| I/O Standards | — | LVTTL, LVCMOS, True-LVDS, PCI |
| Operating Voltage (Core) | — | [DATA_NEEDED: core VCC range] |
| MultiVolt I/O Support | — | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant |
| Configuration Method | — | SRAM bitstream, JTAG/serial |