EP1M120F484C8A vs EP1M120F484C8ES तुलना
विस्तृत दोनों ओर की तुलना EP1M120F484C8A द्वारा Intel और EP1M120F484C8ES द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | EP1M120F484C8A | EP1M120F484C8ES |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | Obsolete | Obsolete |
| Family | Mercury (EP1M) | ACEX 1M |
| Series | EP1M120 | — |
| System Gates | 120,000 | — |
| Logic Elements / Cells | 4,800 | — |
| Number of LABs/CLBs | 480 | — |
| Total RAM Bits | 49,152 | — |
| Number of User I/Os | 303 | — |
| Number of Transceivers | Integrated CDR-capable, up to 1.25 Gbps | — |
| Core Supply Voltage | 1.8 V | — |
| पैकेज | 484-ball FC-FBGA (FineLine BGA) | 484-ball FineLine BGA |
| Package Pin Count | 484 | — |
| ऑपरेटिंग तापमान | 0 °C to +85 °C (commercial) | [DATA_NEEDED: industrial/commercial grade temp range] |
| Speed Grade | -8 (C8) | C8 (-8 speed bin) |
| Logic Family | CMOS | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount (BGA) |
| RoHS स्थिति | [DATA_NEEDED: rohs_status] | [DATA_NEEDED] |
| Process Technology | [DATA_NEEDED: process_node] | 0.18 µm CMOS, SRAM-based |
| Manufacturer | — | Intel (formerly Altera) |
| Logic Elements / Gates | — | 120,000 (120K gates) |
| Embedded Logic Cells (EABs) | — | 4,800 |
| User I/O Pins | — | 303 |
| Sample Grade | — | ES (Engineering Sample) |
| Embedded RAM | — | ~104 Kbits across 12 RAM blocks |
| PLLs | — | 4 enhanced PLLs |
| I/O Standards | — | LVTTL, LVCMOS, True-LVDS, PCI |
| Operating Voltage (Core) | — | [DATA_NEEDED: core VCC range] |
| MultiVolt I/O Support | — | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant |
| Configuration Method | — | SRAM bitstream, JTAG/serial |