EP1M120F484C8A vs EP1M120F484C8ES Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP1M120F484C8A disebabkan oleh Intel dan EP1M120F484C8ES disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP1M120F484C8A | EP1M120F484C8ES |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Obsolete | Obsolete |
| Family | Mercury (EP1M) | ACEX 1M |
| Series | EP1M120 | — |
| System Gates | 120,000 | — |
| Logic Elements / Cells | 4,800 | — |
| Number of LABs/CLBs | 480 | — |
| Total RAM Bits | 49,152 | — |
| Number of User I/Os | 303 | — |
| Number of Transceivers | Integrated CDR-capable, up to 1.25 Gbps | — |
| Core Supply Voltage | 1.8 V | — |
| Kemasan | 484-ball FC-FBGA (FineLine BGA) | 484-ball FineLine BGA |
| Package Pin Count | 484 | — |
| Suhu Operasi | 0 °C to +85 °C (commercial) | [DATA_NEEDED: industrial/commercial grade temp range] |
| Speed Grade | -8 (C8) | C8 (-8 speed bin) |
| Logic Family | CMOS | — |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Status RoHS | [DATA_NEEDED: rohs_status] | [DATA_NEEDED] |
| Process Technology | [DATA_NEEDED: process_node] | 0.18 µm CMOS, SRAM-based |
| Manufacturer | — | Intel (formerly Altera) |
| Logic Elements / Gates | — | 120,000 (120K gates) |
| Embedded Logic Cells (EABs) | — | 4,800 |
| User I/O Pins | — | 303 |
| Sample Grade | — | ES (Engineering Sample) |
| Embedded RAM | — | ~104 Kbits across 12 RAM blocks |
| PLLs | — | 4 enhanced PLLs |
| I/O Standards | — | LVTTL, LVCMOS, True-LVDS, PCI |
| Operating Voltage (Core) | — | [DATA_NEEDED: core VCC range] |
| MultiVolt I/O Support | — | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant |
| Configuration Method | — | SRAM bitstream, JTAG/serial |