EP1M120F484C8A vs EP1M120F484C8ES Perbandingan
Perbandingan bersamaan detil EP1M120F484C8A dari Intel dan EP1M120F484C8ES dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP1M120F484C8A | EP1M120F484C8ES |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Obsolete | Obsolete |
| Family | Mercury (EP1M) | ACEX 1M |
| Series | EP1M120 | — |
| System Gates | 120,000 | — |
| Logic Elements / Cells | 4,800 | — |
| Number of LABs/CLBs | 480 | — |
| Total RAM Bits | 49,152 | — |
| Number of User I/Os | 303 | — |
| Number of Transceivers | Integrated CDR-capable, up to 1.25 Gbps | — |
| Core Supply Voltage | 1.8 V | — |
| Paket | 484-ball FC-FBGA (FineLine BGA) | 484-ball FineLine BGA |
| Package Pin Count | 484 | — |
| Suhu Kerja | 0 °C to +85 °C (commercial) | [DATA_NEEDED: industrial/commercial grade temp range] |
| Speed Grade | -8 (C8) | C8 (-8 speed bin) |
| Logic Family | CMOS | — |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Status RoHS | [DATA_NEEDED: rohs_status] | [DATA_NEEDED] |
| Process Technology | [DATA_NEEDED: process_node] | 0.18 µm CMOS, SRAM-based |
| Manufacturer | — | Intel (formerly Altera) |
| Logic Elements / Gates | — | 120,000 (120K gates) |
| Embedded Logic Cells (EABs) | — | 4,800 |
| User I/O Pins | — | 303 |
| Sample Grade | — | ES (Engineering Sample) |
| Embedded RAM | — | ~104 Kbits across 12 RAM blocks |
| PLLs | — | 4 enhanced PLLs |
| I/O Standards | — | LVTTL, LVCMOS, True-LVDS, PCI |
| Operating Voltage (Core) | — | [DATA_NEEDED: core VCC range] |
| MultiVolt I/O Support | — | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant |
| Configuration Method | — | SRAM bitstream, JTAG/serial |