EP1SGX40GF800I7 vs EP1SGX40GF800C5N مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ EP1SGX40GF800I7 بواسطة Altera و EP1SGX40GF800C5N بواسطة Intel. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | EP1SGX40GF800I7 | EP1SGX40GF800C5N |
|---|---|---|
| العلامة التجارية | Altera | Intel |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | Obsolete | Obsolete |
| Family | Stratix GX | Stratix GX |
| Series | Stratix GX FPGA | — |
| Logic Elements (LE) | 41,250 | — |
| Embedded Memory | 3,423,744 bits | — |
| Embedded Multipliers (18x18) | 624 | — |
| High-Speed Transceivers (SERDES) | 20 channels, up to 3.125 Gbps | — |
| العلبة | 800-ball FineLine BGA (GF) | 780-pin FineLine BGA |
| درجة حرارة التشغيل | -40C to +100C (industrial, I grade) | Commercial (0C to +85C) |
| Speed Grade | -7 | -5 (slower than -6/-7) |
| PLL Count | 12 (logic + transceiver) | — |
| User I/O Banks | [DATA_NEEDED: number of user I/O banks and pins] | — |
| Maximum User I/O | [DATA_NEEDED: max user I/O count] | — |
| Supply Voltage Core | [DATA_NEEDED: VCCINT nominal] | — |
| Configuration Method | Enhanced configuration device / Passive serial / JTAG | EPC enhanced configuration devices or JTAG |
| حالة RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: explicit RoHS statement for this specific MPN] |
| Lead-Free | [DATA_NEEDED: lead-free status] | [DATA_NEEDED: lead-free finish] |
| مستوى MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Transceiver Protocols Supported | PCI Express, Gigabit Ethernet, XAUI, Serial RapidIO, Fibre Channel | — |
| Logic Elements | — | 41,250 |
| Total RAM Bits | — | 3,432,192 (3.4 Mbit) |
| DSP Blocks | — | 14 |
| Embedded Multipliers (9-bit equivalent) | — | 56 |
| Transceiver Channels | — | 20 (up to 3.1875 Gbps per channel) |
| Maximum User I/O Pins | — | [DATA_NEEDED: max user I/O count for 780-pin BGA] |
| PLLs | — | 24 |
| Clock Networks | — | 8 phase-locked |
| Core Voltage | — | 1.5 V |
| Process Technology | — | 0.13 µm SRAM |