EP1SGX40GF800I7 vs EP1SGX40GF800C5N तुलना
विस्तृत दोनों ओर की तुलना EP1SGX40GF800I7 द्वारा Altera और EP1SGX40GF800C5N द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | EP1SGX40GF800I7 | EP1SGX40GF800C5N |
|---|---|---|
| ब्रांड | Altera | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | Obsolete | Obsolete |
| Family | Stratix GX | Stratix GX |
| Series | Stratix GX FPGA | — |
| Logic Elements (LE) | 41,250 | — |
| Embedded Memory | 3,423,744 bits | — |
| Embedded Multipliers (18x18) | 624 | — |
| High-Speed Transceivers (SERDES) | 20 channels, up to 3.125 Gbps | — |
| पैकेज | 800-ball FineLine BGA (GF) | 780-pin FineLine BGA |
| ऑपरेटिंग तापमान | -40C to +100C (industrial, I grade) | Commercial (0C to +85C) |
| Speed Grade | -7 | -5 (slower than -6/-7) |
| PLL Count | 12 (logic + transceiver) | — |
| User I/O Banks | [DATA_NEEDED: number of user I/O banks and pins] | — |
| Maximum User I/O | [DATA_NEEDED: max user I/O count] | — |
| Supply Voltage Core | [DATA_NEEDED: VCCINT nominal] | — |
| Configuration Method | Enhanced configuration device / Passive serial / JTAG | EPC enhanced configuration devices or JTAG |
| RoHS स्थिति | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: explicit RoHS statement for this specific MPN] |
| Lead-Free | [DATA_NEEDED: lead-free status] | [DATA_NEEDED: lead-free finish] |
| MSL स्तर | [DATA_NEEDED: moisture sensitivity level] | — |
| Transceiver Protocols Supported | PCI Express, Gigabit Ethernet, XAUI, Serial RapidIO, Fibre Channel | — |
| Logic Elements | — | 41,250 |
| Total RAM Bits | — | 3,432,192 (3.4 Mbit) |
| DSP Blocks | — | 14 |
| Embedded Multipliers (9-bit equivalent) | — | 56 |
| Transceiver Channels | — | 20 (up to 3.1875 Gbps per channel) |
| Maximum User I/O Pins | — | [DATA_NEEDED: max user I/O count for 780-pin BGA] |
| PLLs | — | 24 |
| Clock Networks | — | 8 phase-locked |
| Core Voltage | — | 1.5 V |
| Process Technology | — | 0.13 µm SRAM |