IPC100N04S52R8ATMA1 vs IPC100N04S51R7ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IPC100N04S52R8ATMA1 بواسطة Infineon و IPC100N04S51R7ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IPC100N04S52R8ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | — |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation (PD, Tc=25C) | 75 W | — |
| درجة حرارة الوصلة التشغيلية | -55C to +175C | -55 °C to +175 °C |
| العلبة | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-34 (SS08 leadless) |
| نوع التركيب | Surface Mount | Surface Mount |
| مستوى MSL | 1 (260C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% (per Infineon standard) | 100% tested |
| RoHS / Green Product | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| نوع الترانزستور | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| AEC-Q101 Qualified | — | Yes |
| حالة RoHS | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |