IPD090N03LGATMA1 vs IPD90N03S4L02ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IPD090N03LGATMA1 بواسطة Infineon و IPD90N03S4L02ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ نشطمقارنة المواصفات
| المعامل | IPD090N03LGATMA1 | IPD90N03S4L02ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | — |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | — |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | — |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| نطاق درجة حرارة التشغيل | -55C to +175C (junction) | — |
| العلبة | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK, surface mount) |
| نوع التركيب | Surface Mount | Surface Mount |
| مستوى MSL | 1 (unlimited) | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| حالة RoHS | Compliant | Compliant (Green Package) |
| Technology Family | OptiMOS 30V | — |
| Configuration | Single | — |
| Technology | — | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| RDS(on) Max at VGS=10 V | — | 2.2 mΩ |
| RDS(on) Max at VGS=4.5 V | — | [DATA_NEEDED: typical value at VGS=4.5 V] |
| Gate Drive Voltage (VGS) | — | 4.5 V to 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical value] |
| درجة حرارة الوصلة التشغيلية | — | -55°C to +175°C |
| Avalanche Rated | — | 100% Avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| Series | — | OptiMOS-T2 |