IPD090N03LGATMA1 vs IPD90N03S4L02ATMA1 比較

詳細並排比較 IPD090N03LGATMA1 由 Infineon 與 IPD90N03S4L02ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD090N03LGATMA1 IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 ✓ 啟用中

規格比較

參數 IPD090N03LGATMA1 IPD90N03S4L02ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 40 A —
Continuous Drain Current (Id) @ Tc=100C [DATA_NEEDED: Id at 100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Id] —
Maximum Power Dissipation (Pd) @ Tc=25C 42 W —
On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A 9 mOhm (typical) —
On-State Resistance (Rds(on)) @ Vgs=4.5V [DATA_NEEDED: Rds(on) at 4.5V] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
工作溫度範圍 -55C to +175C (junction) —
封裝 PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, surface mount)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
RoHS 狀態 Compliant Compliant (Green Package)
Technology Family OptiMOS 30V —
Configuration Single —
Technology — MOSFET (Metal Oxide), OptiMOS-T2 trench
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Tc — 90 A
Power Dissipation (PD) at Tc — 136 W
RDS(on) Max at VGS=10 V — 2.2 mΩ
RDS(on) Max at VGS=4.5 V — [DATA_NEEDED: typical value at VGS=4.5 V]
Gate Drive Voltage (VGS) — 4.5 V to 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical value]
工作接面溫度 — -55°C to +175°C
Avalanche Rated — 100% Avalanche tested
Automotive Qualification — AEC-Q101 qualified
Series — OptiMOS-T2

資料表與資源

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