IPD30N06S2L13ATMA4 vs IRLR3915TRPBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IPD30N06S2L13ATMA4 بواسطة Infineon و IRLR3915TRPBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IPD30N06S2L13ATMA4 | IRLR3915TRPBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | N-Channel |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| العلبة | PG-TO252-3-11 (DPAK) | TO-252AA (DPAK), surface mount |
| نوع التركيب | Surface Mount | Surface Mount |
| درجة حرارة التشغيل | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | IR MOSFET (HEXFET, advanced process) |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | 61 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| عدد الأطراف | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Product Family | — | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 61 A |
| Continuous Drain Current (ID) at TC=100C | — | 30 A (Tc, per distributor listing) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 14 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| Power Dissipation (PD) at TC=25C | — | 120 W |
| Maximum Junction Temperature | — | 175 C |
| نطاق درجة حرارة الوصلة التشغيلية | — | -55 C to +175 C |
| حالة RoHS | — | Compliant (Pb-free PBF suffix) |
| مستوى MSL | — | 1 |
| Repetitive Avalanche Rating | — | Improved (per datasheet) |
| Switching Speed | — | Fast |
| Packaging | — | Tape & Reel (TR) |
| PBF / Lead-Free | — | Yes (PBF suffix = lead-free) |