IPD30N06S2L13ATMA4 vs IRLR3915TRPBF Comparison
Detailed side-by-side comparison of IPD30N06S2L13ATMA4 by Infineon and IRLR3915TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β Active
Specification Comparison
| Parameter | IPD30N06S2L13ATMA4 | IRLR3915TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.40 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Family | OptiMOS | β |
| Channel Type | N-Channel | N-Channel |
| Mode | Enhancement | β |
| Drain-Source Voltage (Vds) | 55 V | β |
| Continuous Drain Current (Id) | 30 A (Tc) | β |
| Power Dissipation (Pd) | 136 W (Tc) | β |
| Package | PG-TO252-3-11 (DPAK) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (Tj) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Lead-Free / RoHS | Yes (Green Package) | β |
| Avalanche Tested | 100 % production-tested | β |
| Technology | Planar (OptiMOS) | IR MOSFET (HEXFET, advanced process) |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | β |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | 61 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | β |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | β |
| Pin Count | 3 (Drain tab + Gate + Source) | β |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | β |
| Product Family | β | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC=25C | β | 61 A |
| Continuous Drain Current (ID) at TC=100C | β | 30 A (Tc, per distributor listing) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | β | 14 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Logic-Level Gate Drive | β | Yes (logic-level compatible) |
| Power Dissipation (PD) at TC=25C | β | 120 W |
| Maximum Junction Temperature | β | 175 C |
| Operating Junction Temperature Range | β | -55 C to +175 C |
| RoHS Status | β | Compliant (Pb-free PBF suffix) |
| MSL Level | β | 1 |
| Repetitive Avalanche Rating | β | Improved (per datasheet) |
| Switching Speed | β | Fast |
| Packaging | β | Tape & Reel (TR) |
| PBF / Lead-Free | β | Yes (PBF suffix = lead-free) |