IPD30N06S2L13ATMA4 vs IRLR3915TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD30N06S2L13ATMA4 tarafından Infineon ve IRLR3915TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ Aktif
Özellik Karşılaştırması
| Parametre | IPD30N06S2L13ATMA4 | IRLR3915TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | N-Channel |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| Paket | PG-TO252-3-11 (DPAK) | TO-252AA (DPAK), surface mount |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | IR MOSFET (HEXFET, advanced process) |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | 61 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| Pin Sayısı | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Product Family | — | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 61 A |
| Continuous Drain Current (ID) at TC=100C | — | 30 A (Tc, per distributor listing) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 14 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| Power Dissipation (PD) at TC=25C | — | 120 W |
| Maximum Junction Temperature | — | 175 C |
| İşletim Jant Sıcaklığı Aralığı | — | -55 C to +175 C |
| RoHS Durumu | — | Compliant (Pb-free PBF suffix) |
| MSL Seviyesi | — | 1 |
| Repetitive Avalanche Rating | — | Improved (per datasheet) |
| Switching Speed | — | Fast |
| Packaging | — | Tape & Reel (TR) |
| PBF / Lead-Free | — | Yes (PBF suffix = lead-free) |