IPD30N06S2L13ATMA4 vs IRLR3915TRPBF Perbandingan
Perbandingan bersamaan detil IPD30N06S2L13ATMA4 dari Infineon dan IRLR3915TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD30N06S2L13ATMA4 | IRLR3915TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | N-Channel |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| Paket | PG-TO252-3-11 (DPAK) | TO-252AA (DPAK), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | IR MOSFET (HEXFET, advanced process) |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | 61 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| Jumlah Pin | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Product Family | — | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 61 A |
| Continuous Drain Current (ID) at TC=100C | — | 30 A (Tc, per distributor listing) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 14 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| Power Dissipation (PD) at TC=25C | — | 120 W |
| Maximum Junction Temperature | — | 175 C |
| Rentang Suhu Hubung Kerja | — | -55 C to +175 C |
| Status RoHS | — | Compliant (Pb-free PBF suffix) |
| Level MSL | — | 1 |
| Repetitive Avalanche Rating | — | Improved (per datasheet) |
| Switching Speed | — | Fast |
| Packaging | — | Tape & Reel (TR) |
| PBF / Lead-Free | — | Yes (PBF suffix = lead-free) |