IPD30N06S2L13ATMA4 vs IRLR3915TRPBF तुलना
विस्तृत दोनों ओर की तुलना IPD30N06S2L13ATMA4 द्वारा Infineon और IRLR3915TRPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | IPD30N06S2L13ATMA4 | IRLR3915TRPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | N-Channel |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| पैकेज | PG-TO252-3-11 (DPAK) | TO-252AA (DPAK), surface mount |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | IR MOSFET (HEXFET, advanced process) |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | 61 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| पिन काउंट | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Product Family | — | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 61 A |
| Continuous Drain Current (ID) at TC=100C | — | 30 A (Tc, per distributor listing) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 14 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| Power Dissipation (PD) at TC=25C | — | 120 W |
| Maximum Junction Temperature | — | 175 C |
| ऑपरेटिंग जंक्शन तापमान रेंज | — | -55 C to +175 C |
| RoHS स्थिति | — | Compliant (Pb-free PBF suffix) |
| MSL स्तर | — | 1 |
| Repetitive Avalanche Rating | — | Improved (per datasheet) |
| Switching Speed | — | Fast |
| Packaging | — | Tape & Reel (TR) |
| PBF / Lead-Free | — | Yes (PBF suffix = lead-free) |