IPP600N25N3GXKSA1 vs IPP075N15N3GXKSA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IPP600N25N3GXKSA1 بواسطة Infineon و IPP075N15N3GXKSA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IPP600N25N3GXKSA1 | IPP075N15N3GXKSA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (OptiMOS 3) |
| Drain-to-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| العلبة / الحالة | TO-220-3 (PG-TO220-3-1) | — |
| نوع التركيب | Through Hole | Through Hole |
| نطاق درجة حرارة التشغيل | -55C to +175C (junction) | [DATA_NEEDED: junction operating temperature range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | [DATA_NEEDED: total gate charge] |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| عدد الأطراف | 3 (Gate, Drain, Source) | — |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Power Dissipation (PD, Tc=25C) | — | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | — | 7.5 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage absolute max] |
| العلبة | — | PG-TO220-3 (TO-220 through-hole) |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Lead-Free / RoHS | — | RoHS Compliant |
| Ordering Code Suffix | — | GXKSA1 (Tube pack, RoHS compliant) |