IPP600N25N3GXKSA1 vs IPP075N15N3GXKSA1 比較
詳細並排比較 IPP600N25N3GXKSA1 由 Infineon 與 IPP075N15N3GXKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPP600N25N3GXKSA1 | IPP075N15N3GXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (OptiMOS 3) |
| Drain-to-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| 封裝 / 外殼 | TO-220-3 (PG-TO220-3-1) | — |
| 安裝類型 | Through Hole | Through Hole |
| 工作溫度範圍 | -55C to +175C (junction) | [DATA_NEEDED: junction operating temperature range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | [DATA_NEEDED: total gate charge] |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Power Dissipation (PD, Tc=25C) | — | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | — | 7.5 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage absolute max] |
| 封裝 | — | PG-TO220-3 (TO-220 through-hole) |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Lead-Free / RoHS | — | RoHS Compliant |
| Ordering Code Suffix | — | GXKSA1 (Tube pack, RoHS compliant) |