IRLB4030PBF vs IRLB8748PBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRLB4030PBF بواسطة Infineon و IRLB8748PBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRLB4030PBF | IRLB8748PBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| نوع الترانزستور | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.3 mOhm | 4.8 mOhm |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 87 nC | 15 nC typical |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] | — |
| Power Dissipation (PD) at Tc | 370 W | — |
| نطاق درجة حرارة التشغيل | -55C to +175C | -55C to +175C (junction) |
| العلبة | TO-220AB | — |
| نوع التركيب | Through Hole | Through Hole |
| Technology | HEXFET (StrongIRFET family) | — |
| Logic Level Drive | Yes (optimized for 4.5 V to 10 V VGS) | — |
| Qualification | JEDEC | — |
| حالة RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 92 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Package Type | — | TO-220AB through-hole |
| Technology Family | — | StrongIRFET / HEXFET |
| Channel Type | — | N-Channel |
| Logic-Level Gate Drive | — | Yes (optimized for 5V VGS) |
| Qualification Standard | — | JEDEC (Industrial market per datasheet) |