IRLB4030PBF vs IRLB8748PBF Perbandingan

Perbandingan bersamaan detil IRLB4030PBF dari Infineon dan IRLB8748PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLB4030PBF IRLB8748PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 180 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm 4.8 mOhm
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 87 nC 15 nC typical
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] —
Power Dissipation (PD) at Tc 370 W —
Rentang Suhu Kerja -55C to +175C -55C to +175C (junction)
Paket TO-220AB —
Tipe Mounting Through Hole Through Hole
Technology HEXFET (StrongIRFET family) —
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) —
Qualification JEDEC —
Status RoHS Compliant Compliant (Pb-free PBF suffix)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TC=25C — 92 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at TC=25C — 75 W
Package Type — TO-220AB through-hole
Technology Family — StrongIRFET / HEXFET
Channel Type — N-Channel
Logic-Level Gate Drive — Yes (optimized for 5V VGS)
Qualification Standard — JEDEC (Industrial market per datasheet)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon