IRLB4030PBF vs IRLB8748PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLB4030PBF sa pamamagitan ng Infineon at IRLB8748PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLB4030PBF IRLB8748PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 180 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm 4.8 mOhm
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 87 nC 15 nC typical
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] —
Power Dissipation (PD) at Tc 370 W —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +175C (junction)
Packhaging TO-220AB —
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (StrongIRFET family) —
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) —
Qualification JEDEC —
Tindminan RoHS Compliant Compliant (Pb-free PBF suffix)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TC=25C — 92 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at TC=25C — 75 W
Package Type — TO-220AB through-hole
Technology Family — StrongIRFET / HEXFET
Channel Type — N-Channel
Logic-Level Gate Drive — Yes (optimized for 5V VGS)
Qualification Standard — JEDEC (Industrial market per datasheet)

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