NVHL072N120SC1 vs NTHL040N120SC1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ NVHL072N120SC1 بواسطة onsemi و NTHL040N120SC1 بواسطة onsemi. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | NVHL072N120SC1 | NTHL040N120SC1 |
|---|---|---|
| العلامة التجارية | onsemi | onsemi |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Device Type | N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC | — |
| Drain-Source Voltage (VDS) | 1200 V | — |
| Technology | M1 planar SiC | Silicon Carbide (SiC), EliteSiC M1 |
| RDS(on) Max | [DATA_NEEDED: RDS(on) max for NVHL072N120SC1] | — |
| Continuous Drain Current (Tc) | [DATA_NEEDED: ID at Tc for NVHL072N120SC1] | 60 A |
| Power Dissipation (Tc) | [DATA_NEEDED: PD at Tc for NVHL072N120SC1] | 348 W |
| Total Gate Charge (QG tot) | [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade) | — |
| Effective Output Capacitance (Coss) | [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade) | — |
| العلبة | TO-247-3 (through hole) | TO-247-3L (Through Hole) |
| نوع التركيب | Through Hole | Through Hole |
| 100% UIL Tested | Yes | — |
| AEC-Q101 | Qualified | — |
| PPAP | Capable | — |
| Halide Free | Yes | — |
| حالة RoHS | Compliant | Compliant |
| Channel Type | — | N-Channel |
| VDS (Drain-Source Voltage) | — | 1200 V |
| RDS(on) (Max) | — | 40 mΩ |
| Avalanche Energy EAS | — | 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) |
| Configuration | — | Single FET |
| Gate Charge | — | [DATA_NEEDED: total gate charge Qg] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss] |
| Junction Temperature Range | — | [DATA_NEEDED: Tj range] |
| Thermal Resistance RthJC | — | [DATA_NEEDED: RthJC] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL] |