NVHL072N120SC1 vs NTHL040N120SC1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NVHL072N120SC1 disebabkan oleh onsemi dan NTHL040N120SC1 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NVHL072N120SC1 | NTHL040N120SC1 |
|---|---|---|
| Merek | onsemi | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Device Type | N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC | — |
| Drain-Source Voltage (VDS) | 1200 V | — |
| Technology | M1 planar SiC | Silicon Carbide (SiC), EliteSiC M1 |
| RDS(on) Max | [DATA_NEEDED: RDS(on) max for NVHL072N120SC1] | — |
| Continuous Drain Current (Tc) | [DATA_NEEDED: ID at Tc for NVHL072N120SC1] | 60 A |
| Power Dissipation (Tc) | [DATA_NEEDED: PD at Tc for NVHL072N120SC1] | 348 W |
| Total Gate Charge (QG tot) | [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade) | — |
| Effective Output Capacitance (Coss) | [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade) | — |
| Kemasan | TO-247-3 (through hole) | TO-247-3L (Through Hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| 100% UIL Tested | Yes | — |
| AEC-Q101 | Qualified | — |
| PPAP | Capable | — |
| Halide Free | Yes | — |
| Status RoHS | Compliant | Compliant |
| Channel Type | — | N-Channel |
| VDS (Drain-Source Voltage) | — | 1200 V |
| RDS(on) (Max) | — | 40 mΩ |
| Avalanche Energy EAS | — | 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) |
| Configuration | — | Single FET |
| Gate Charge | — | [DATA_NEEDED: total gate charge Qg] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss] |
| Junction Temperature Range | — | [DATA_NEEDED: Tj range] |
| Thermal Resistance RthJC | — | [DATA_NEEDED: RthJC] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL] |