RTAX2000D-1CQ352E vs RTAX2000D-1CQ352V مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000D-1CQ352E بواسطة Microchip Technology و RTAX2000D-1CQ352V بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-1CQ352E ✓ نشطMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000D-1CQ352E | RTAX2000D-1CQ352V |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Equivalent System Gates | 2000000 gates | — |
| Logic Organization | 19712 CLBs | — |
| Technology | Digital CMOS FPGA, antifuse (nonvolatile) | Digital CMOS, antifuse (nonvolatile) |
| العلبة | CQFP352 (352-terminal Ceramic Quad Flat Pack) | CQFP-352 (CQ352), ceramic |
| نطاق درجة حرارة التشغيل | -55C to +125C | — |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Total Ionizing Dose (Functional) | 300 krad | 300 krad (Si) |
| Total Ionizing Dose (Rated) | 200 krad | — |
| DSP Mathblocks | Up to 120 | Up to 120 |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits with optional EDAC protection |
| Programmability | One-time programmable (antifuse) | — |
| جهد التغذية | [DATA_NEEDED: core/supply voltage] | — |
| User I/O Terminals | [DATA_NEEDED: user I/O count for CQ352] | — |
| Max System Frequency | [DATA_NEEDED: max system frequency] | — |
| Radiation Environment Target | Space-based applications | — |
| Commercial Prototype Equivalent | Axcelerator family device | — |
| Equivalent Gates | — | 2,000,000 |
| Logic Cells | — | 29,568 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Configuration | — | Live at power-up, single-chip, no external configuration device |
| Speed Grade | — | -1 |
| نوع التركيب | — | Surface Mount |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |
| درجة حرارة التشغيل | — | [DATA_NEEDED: Operating Temperature] |
| حالة RoHS | — | [DATA_NEEDED: RoHS Status] |