RTAX2000D-1CQ352E vs RTAX2000D-1CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000D-1CQ352E द्वारा Microchip Technology और RTAX2000D-1CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-1CQ352E ✓ सक्रियMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000D-1CQ352E | RTAX2000D-1CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Equivalent System Gates | 2000000 gates | — |
| Logic Organization | 19712 CLBs | — |
| Technology | Digital CMOS FPGA, antifuse (nonvolatile) | Digital CMOS, antifuse (nonvolatile) |
| पैकेज | CQFP352 (352-terminal Ceramic Quad Flat Pack) | CQFP-352 (CQ352), ceramic |
| ऑपरेटिंग तापमान रेंज | -55C to +125C | — |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Total Ionizing Dose (Functional) | 300 krad | 300 krad (Si) |
| Total Ionizing Dose (Rated) | 200 krad | — |
| DSP Mathblocks | Up to 120 | Up to 120 |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits with optional EDAC protection |
| Programmability | One-time programmable (antifuse) | — |
| सप्लाई वोल्टेज | [DATA_NEEDED: core/supply voltage] | — |
| User I/O Terminals | [DATA_NEEDED: user I/O count for CQ352] | — |
| Max System Frequency | [DATA_NEEDED: max system frequency] | — |
| Radiation Environment Target | Space-based applications | — |
| Commercial Prototype Equivalent | Axcelerator family device | — |
| Equivalent Gates | — | 2,000,000 |
| Logic Cells | — | 29,568 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Configuration | — | Live at power-up, single-chip, no external configuration device |
| Speed Grade | — | -1 |
| माउंटिंग प्रकार | — | Surface Mount |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |
| ऑपरेटिंग तापमान | — | [DATA_NEEDED: Operating Temperature] |
| RoHS स्थिति | — | [DATA_NEEDED: RoHS Status] |