UCC21521DWR vs UCC21530Q-Q1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ UCC21521DWR بواسطة Texas Instruments و UCC21530Q-Q1 بواسطة Texas Instruments. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | UCC21521DWR | UCC21530Q-Q1 |
|---|---|---|
| العلامة التجارية | Texas Instruments | Texas Instruments |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Channel Count | 2 | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Isolation Rating | 5700 Vrms | 5.7 kVRMS (reinforced) |
| CMTI | 100 V/ns (minimum) | — |
| Propagation Delay | 19 ns (typical) | — |
| Delay Matching | 5 ns (maximum) | — |
| Pulse-Width Distortion | 6 ns (maximum) | — |
| Minimum Pulse Width | 10 ns | — |
| Max Switching Frequency | 5 MHz | — |
| Isolation Technology | Capacitive coupling | — |
| Input Threshold | TTL and CMOS compatible (3.3 V logic) | TTL and CMOS compatible |
| Enable / Disable Pin | Yes (DIS) | — |
| درجة حرارة التشغيل | -40C to +125C | [DATA_NEEDED: temperature range] |
| العلبة | SOIC-16 (DW) | SOIC-14 (DWK) |
| نوع التركيب | Surface Mount | Surface Mount |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| حالة RoHS | Compliant | Compliant |
| Output Peak Current (Source) | — | 4 A |
| Output Peak Current (Sink) | — | 6 A |
| Channel-to-Channel Spacing | — | 3.3 mm |
| CMTI (Common-Mode Transient Immunity) | — | 125 V/ns (minimum) |
| Maximum Switching Frequency | — | 5 MHz |
| Number of Channels | — | 2 |
| Configuration | — | Low-side, high-side, half-bridge, dual low-side |
| Dead Time | — | Programmable via DT pin resistor |
| دبوس التمكين | — | Yes |
| Driven Device Types | — | IGBT, Si MOSFET, SiC MOSFET |
| Qualification | — | AEC-Q100 (automotive) |
| Supply Voltage VDDI | — | [DATA_NEEDED: VDDI range] |