UCC21521DWR vs UCC21530Q-Q1 比較

詳細並排比較 UCC21521DWR 由 Texas Instruments 與 UCC21530Q-Q1 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 啟用中
Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ 啟用中

規格比較

參數 UCC21521DWR UCC21530Q-Q1
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Channel Count 2 —
Peak Source Current 4 A —
Peak Sink Current 6 A —
Isolation Rating 5700 Vrms 5.7 kVRMS (reinforced)
CMTI 100 V/ns (minimum) —
Propagation Delay 19 ns (typical) —
Delay Matching 5 ns (maximum) —
Pulse-Width Distortion 6 ns (maximum) —
Minimum Pulse Width 10 ns —
Max Switching Frequency 5 MHz —
Isolation Technology Capacitive coupling —
Input Threshold TTL and CMOS compatible (3.3 V logic) TTL and CMOS compatible
Enable / Disable Pin Yes (DIS) —
工作溫度 -40C to +125C [DATA_NEEDED: temperature range]
封裝 SOIC-16 (DW) SOIC-14 (DWK)
安裝類型 Surface Mount Surface Mount
Configurations Dual low-side, dual high-side, or half-bridge —
RoHS 狀態 Compliant Compliant
Output Peak Current (Source) — 4 A
Output Peak Current (Sink) — 6 A
Channel-to-Channel Spacing — 3.3 mm
CMTI (Common-Mode Transient Immunity) — 125 V/ns (minimum)
Maximum Switching Frequency — 5 MHz
Number of Channels — 2
Configuration — Low-side, high-side, half-bridge, dual low-side
Dead Time — Programmable via DT pin resistor
致能腳位 — Yes
Driven Device Types — IGBT, Si MOSFET, SiC MOSFET
Qualification — AEC-Q100 (automotive)
Supply Voltage VDDI — [DATA_NEEDED: VDDI range]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價