IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon
MPN: IAUZN08S7L177ATMA1 ✓ نشطIAUZN08S7L177ATMA1 نظرة عامة
A power MOSFET is a voltage-controlled majority-carrier switch used to convert and route energy in switched-mode power supplies (SMPS), motor drives, load switches and protection circuits. Within the broader component taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> field-effect transistors, and OptiMOS 7 represents Infineon's automotive-qualified 30 V-800 V power MOSFET platform optimized for low conduction loss, low switching loss and high avalanche ruggedness.
Key features include a 17.7 mΩ maximum RDS(on) at VGS=10 V, an ultra-low gate charge Qg typical of the OptiMOS 7 generation, logic-level VGS(th) for direct microcontroller drive, and 100% Rg and UIS tested. The automotive-grade qualification makes the device suitable for AEC-Q101 environments, while the 3x3 mm² S3O8 footprint enables compact PCB layouts for high-density power designs.
The OptiMOS 7 silicon uses an advanced trench MOSFET architecture with optimized cell pitch to balance RDS(on) and switching charge, delivering higher efficiency than OptiMOS 5/6 predecessors at the same footprint. Low thermal resistance to case (RthJC) supports high continuous currents, and the leadless PG-TSDSON-8-44 package provides low package inductance which is critical for fast-switching half-bridge and synchronous-rectifier stages.
Typical applications include 48 V mild-hybrid DC-DC converters, automotive e-fuse protection, battery management system (BMS) charge/discharge switches, LED driving front stages, and high-side/low-side motor control H-bridges. The 80 V rating gives ample headroom above 48 V bus transients.
When designing, ensure VGS drive is firmly in the 10 V enhancement region for lowest RDS(on), use a gate-source resistor to suppress parasitic oscillation, and observe land-pattern recommendations in the datasheet to keep the S3O8 thermal pad soldered for proper heat extraction.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet to support faster BOM decisions.
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الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IAUZN08S7L177ATMA1 (نفس عامل الشكل والبصمة) — يختلف في Package, Technology, MSL Level, Operating Temperature Range, Configuration.
IAUCN08S7L033ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN04S7L042GATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN10S5L280DATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC60N04S6L030HATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC120N04S6N010ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC120N04S6N009ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUZN08S7L177ATMA1 الحدود القصوى والخصائص الكهربائية
| Technology | OptiMOS 7 N-channel power MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 35 A (Tj) |
| Power Dissipation (PD) | 45 W (Tc) |
| On-Resistance (RDS(on)) | 17.7 mΩ max |
| العلبة | PG-TSDSON-8-44 (S3O8, 3x3 mm²) |
| نوع التركيب | Surface Mount |
| Polarity | N-Channel |
| درجة حرارة التشغيل | -55C to +175C (Tj, automotive grade) |
| Configuration | Single |
| Qualification | AEC-Q101 automotive |
| مستوى MSL | 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes |
| حالة RoHS | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V |
تكوين أطراف IAUZN08S7L177ATMA1
| دبوس 1 | GATE — Gate input - apply 10 V VGS for full enhancement |
| دبوس 2 | SOURCE — Source connection (also Kelvin source on some pin maps) |
| دبوس 3 | SOURCE — Source connection |
| دبوس 4 | SOURCE — Source connection |
| دبوس 5 | DRAIN — Drain connection (also thermally bonded to pad) |
| دبوس 6 | DRAIN — Drain connection |
| دبوس 7 | DRAIN — Drain connection |
| دبوس 8 | DRAIN — Drain connection |
| دبوس PAD | DRAIN / THERMAL PAD — Exposed pad - drain and primary thermal path; must be soldered to PCB copper |
منطقة التشغيل الآمن (DC, Tj=25°C)
التطبيقات النموذجية
IAUZN08S7L177ATMA1 مناسب لـ 7 التطبيقs: 48 V Mild-Hybrid DC-DC Converter, Automotive e-Fuse / Solid-State Relay, Battery Management System (BMS) Charge/Discharge Switch, LED Driving Front Stage / Daytime Running Light, High-Side / Low-Side Motor Control H-Bridge, Industrial 24 V / 48 V Load Switch, USB-PD / Fast-Charge Sink Switch.
48 V Mild-Hybrid DC-DC Converter
The IAUZN08S7L177ATMA1's 80 V VDS, 17.7 mΩ max RDS(on) and S3O8 3x3 mm² footprint make it well-suited as a synchronous-rectifier or primary-side switch in 48 V mild-hybrid DC-DC converters. The 80 V rating comfortably covers 48 V bus transients up to ~60 V, while the low RDS(on) keeps conduction loss under 1 W at 10 A - critical for the 3-5 kW power levels common in mild-hybrid systems. Compared with a switching-only topology, using this part reduces heatsink area on the PCB and supports >96% efficiency targets. Pair with a 100 V gate driver and observe the datasheet's recommended gate-source resistor to suppress ringing.
موصى به
Automotive e-Fuse / Solid-State Relay
Used as the switching element in an automotive solid-state fuse, the IAUZN08S7L177ATMA1 provides fast, resettable over-current protection for 12 V and 24 V body-electronic loads. Its 80 V rating exceeds load-dump transients up to ~40 V on a 24 V bus, while the 35 A continuous drain current covers typical body-control module loads. Compared with a mechanical relay, the MOSFET-based e-fuse offers microsecond response, no contact bounce, and silent operation. The AEC-Q101 qualification is essential for chassis and under-hood e-fuse designs. Source the gate drive from a current-sense amplifier for closed-loop fold-back.
موصى به
Battery Management System (BMS) Charge/Discharge Switch
In a 12 V / 24 V lead-acid or Li-ion battery management system, the IAUZN08S7L177ATMA1 can serve as the low-loss charge/discharge FET, replacing mechanical contactors or older TrenchFET generations. Its 17.7 mΩ RDS(on) at 35 A dissipates roughly 21 W at peak, manageable with the S3O8 thermal pad bonded to a 1 sq. inch copper pour. The 80 V VDS margin covers 24 V bus transients during alternator load-dump. Automotive-grade qualification supports under-hood BMS installations. Pair with a dedicated battery monitor IC for cell balancing and over-current cutoff.
موصى به
LED Driving Front Stage / Daytime Running Light
The IAUZN08S7L177ATMA1 is well-suited as a high-side PWM switch for automotive LED daytime running lamps (DRL) and signal lighting. Its 80 V rating tolerates load-dump spikes, while the 35 A ID easily drives multi-LED strings up to 2-3 A per string. The low RDS(on) of 17.7 mΩ minimizes thermal rise during PWM dimming, and the S3O8 footprint allows a compact driver board. Compared with discrete BJT switches, the MOSFET's faster switching edges improve dimming linearity. Drive the gate from an automotive LED driver such as the TLD1125ELXUMA1.
موصى به
High-Side / Low-Side Motor Control H-Bridge
In automotive brushed DC or small BLDC motor H-bridges (window lift, seat adjust, fuel pump), the IAUZN08S7L177ATMA1 can be used for either the high-side or low-side switch in each half-bridge leg. Its 35 A continuous rating covers motors up to ~15 A RMS with proper thermal design, and the 80 V VDS margin handles the back-EMF spikes of 12 V/24 V motors. Compared with older MOSFET generations, the OptiMOS 7 platform reduces switching losses, enabling higher PWM frequencies and quieter motor operation. Verify dead-time insertion in the gate driver to prevent shoot-through.
موصى به
Industrial 24 V / 48 V Load Switch
Outside the automotive segment, the IAUZN08S7L177ATMA1 functions as a robust industrial 24 V/48 V load switch or hot-swap controller, leveraging its 80 V VDS margin and automotive-grade ruggedness. The 17.7 mΩ RDS(on) keeps steady-state losses low in continuous-duty 10-15 A loads, while the S3O8 package simplifies PCB thermal design. Compared with non-automotive MOSFETs, the AEC-Q101 qualification gives an extra safety margin in factory-automation environments with wide temperature swings. Add a TVS across drain-source for inductive load switching protection.
موصى به
USB-PD / Fast-Charge Sink Switch
In USB-PD or higher-voltage fast-charge sink applications, the IAUZN08S7L177ATMA1 can serve as the input protection / load switch on the device side, providing reverse-polarity and over-voltage protection up to 80 V. The 17.7 mΩ RDS(on) keeps voltage drop under 200 mV at 10 A charging current, preserving the PD contract voltage. Compared with dedicated load-switch ICs, the discrete MOSFET gives flexibility in gate-drive timing for inrush control. Drive the gate from a charge-controller companion and place a TVS upstream for surge protection.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IAUZN08S7L177ATMA1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IAUCN08S7L033ATMA1 | IAUCN04S7L042GATMA1 | IAUCN10S5L280DATMA1 | IAUC60N04S6L030HATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 40 V | 100 V | 60 V | 40 V |
| Continuous Drain Current (ID) | 35 A | 100 A | 100 A | 60 A | 60 A | 120 A |
| On-Resistance (RDS(on) max) | 17.7 mΩ | 3.3 mΩ | 4.2 mΩ | 28 mΩ | 3.0 mΩ | 1.0 mΩ |
| Power Dissipation (PD) | 45 W (Tc) | 70 W (Tc) | 60 W (Tc) | 45 W (Tc) | 50 W (Tc) | 60 W (Tc) |
| Generation / Family | OptiMOS 7 automotive | OptiMOS 7 automotive | OptiMOS 7 automotive | OptiMOS 5 automotive | OptiMOS 6 automotive | OptiMOS 6 automotive |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
أبرز الفروقات
- Optimized 80 V OptiMOS 7 silicon for 48 V automotive buses (مقابلIAUCN10S5L280DATMA1)
- Smaller die in same S3O8 footprint for compact designs (مقابلIAUCN08S7L033ATMA1)
- Higher VDS margin than 60 V / 40 V alternatives (مقابلIAUC60N04S6L030HATMA1)
ملاحظات التصميم
Estimated: at 25 A continuous load with 17.7 mΩ RDS(on), steady-state conduction loss is roughly 11 W; with the S3O8 3x3 mm² package on 1 sq. inch of 2 oz copper, junction temperature rise stays within 60-70 C above ambient. For continuous currents above 20 A, expand the copper pour under the thermal pad to at least 2 sq. inches, or use internal PCB layers stitched with thermal vias to spread heat.
Keep the gate-loop area (gate-driver output -> gate -> source-return) as small as possible - use a Kelvin source pin if exposed, and place the gate series resistor (typically 10-47 Ω) within 5 mm of the gate pin. The drain-source switching loop must also be minimized to limit parasitic inductance which can over-voltage the die during fast switching transitions.
Drive the gate to 10 V for lowest RDS(on); 4.5 V VGS is insufficient to fully enhance the OptiMOS 7 cell and will increase on-resistance by 2-3x. Add a 100 kΩ gate-source pull-down to keep the device off during controller power-up. Verify the gate-driver peak sink/source current rating is adequate to charge the OptiMOS 7 Qg within the desired switching time.
Do not operate above 80 V VDS - avalanche at higher voltages can damage the die. For 24 V load-dump environments, place a TVS across drain-source (rated to clamp below 80 V) to absorb transient spikes. Also confirm that the S3O8 thermal pad is properly soldered: a dry joint will increase RthJA by 30-50% and cause thermal runaway at high current.
The fast-switching edges of OptiMOS 7 (sub-10 ns rise time) can produce EMI above 100 MHz. Use a snubber or gate-resistor tuning to slow the edges to 20-30 ns if EMI compliance is required, and ensure the drain-source loop area stays below 0.5 sq. cm. Common-mode chokes on input/output may also be required for Class B EMI limits.
معلومات الامتثال
AEC-Q101 (automotive MOSFET standard, equivalent to AEC-Q100 for discretes) qualified per Infineon OptiMOS 7 automotive platform. RoHS and REACH compliant per Infineon product page. Halogen-free status not explicitly stated in verified data - set to unknown.
